PD - 9.1382A
IRFP054N
HEXFET
®
Power MOSFET
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
V
DSS
= 55V
R
DS(on)
= 0.012Ω
G
I
D
= 81A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
TO-247AC
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
81
57
290
170
1.1
± 20
360
43
17
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.90
–––
40
Units
°C/W
8/25/97
IRFP054N
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
55
–––
–––
2.0
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.06
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
66
40
46
5.0
13
2900
880
330
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.012
Ω
V
GS
= 10V, I
D
= 43A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 43A
25
V
DS
= 55V, V
GS
= 0V
µA
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
130
I
D
= 43A
23
nC V
DS
= 44V
53
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 28V
–––
I
D
= 43A
ns
–––
R
G
= 3.6Ω
–––
R
D
= 0.62Ω, See Fig. 10
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
81
240
81
A
290
1.3
120
370
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 43A, V
GS
= 0V
T
J
= 25°C, I
F
= 43A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Uses IRF1010N data and test conditions
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
V
DD
= 25V, starting T
J
= 25°C, L = 390µH
R
G
= 25Ω, I
AS
= 43A. (See Figure 12)
I
SD
≤
43A, di/dt
≤
260A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
IRFP054N
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
I , D ra in -to -S o u rce C u rre n t (A )
D
I , D ra in -to -S o u rce C u rre n t (A )
D
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
100
100
4 .5V
20 µs P UL SE W IDTH
T
C
= 17 5°C
0.1
1
10
100
4 .5V
10
0.1
1
20µ s PU L SE W ID TH
T
C
= 2 5°C
10
A
10
A
100
V D S , Drain-to-Source Voltage (V )
V D S , Drain-to-Source V oltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
D S (o n)
, D ra in -to -S o u rc e O n R e s ista n ce
(N o rm a lize d )
I
D
= 72 A
I
D
, D r ain- to-S ourc e C urre nt (A )
2.5
T
J
= 2 5 ° C
100
T
J
= 1 7 5 ° C
2.0
1.5
10
1.0
0.5
1
4
5
6
7
V
DS
= 2 5 V
2 0 µ s P U L SE W ID TH
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
80
V
G S
= 10 V
100 120 140 160 180
A
V
G S
, Ga te-to-S o urce V oltage (V )
T
J
, Junction T emperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRFP054N
5000
4000
V
G S
, G a te -to -S o u rc e V o lta g e (V )
V
GS
C
is s
C
rs s
C
is s C
o ss
= 0 V,
f = 1M H z
= C
gs
+ C
gd
, C
ds
SH O RTE D
= C
gd
= C
ds
+ C
g d
20
I
D
= 4 3A
V
D S
= 4 4V
V
D S
= 2 8V
16
C , C a p a cita n ce (p F )
3000
C
os s
12
2000
8
C
rs s
1000
4
0
1
10
100
A
0
0
20
40
60
FO R TE ST C IR C U IT
SEE FIG U R E 13
80
100
120
140
A
V
D S
, Drain-to-Source V oltage (V)
Q
G
, T otal G ate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
S D
, R everse Drain C urrent (A )
O PER ATION IN TH IS AR EA L IMITED
BY R
DS (on)
10µ s
100
100 µs
100
T
J
= 17 5 °C
T
J
= 2 5°C
I
D
, D ra in C u rre n t (A )
1 ms
10
10m s
10
0.4
0.8
1.2
1.6
2.0
V
GS
= 0 V
2.4
A
1
1
T
C
= 2 5°C
T
J
= 1 75 °C
Sing le P ulse
10
100
2.8
A
V
S D
, Source-to-D rain Voltage (V )
V
D S
, D rain-to-S ource V oltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRFP054N
100
V
DS
LIMITED BY PACKAGE
V
GS
R
G
R
D
D.U.T.
+
80
-
V
DD
I D , Drain Current (A)
10V
60
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
40
Fig 10a.
Switching Time Test Circuit
V
DS
20
90%
0
25
50
75
100
125
150
175
TC , Case Temperature
( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
1
Fig 10b.
Switching Time Waveforms
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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