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VS-HFA04SD60SL-M3

Description
DIODE GEN PURP 600V 4A TO252
CategoryDiscrete semiconductor    diode   
File Size157KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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VS-HFA04SD60SL-M3 Overview

DIODE GEN PURP 600V 4A TO252

VS-HFA04SD60SL-M3 Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeTO-252AA
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationULTRA FAST SOFT RECOVERY HIGH POWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current25 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.042 µs
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
VS-HFA04SD60S-M3
www.vishay.com
Vishay Semiconductors
HEXFRED
®
,
Ultrafast Soft Recovery Diode, 4 A
2, 4
FEATURES
Ultrafast recovery time
Ultrasoft recovery
Very low I
RRM
Very low Q
rr
Guaranteed avalanche
Specified at operating temperature
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D-PAK (TO-252AA)
TO-252AA (D-PAK)
1
N/C
3
Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-252AA (D-PAK)
4A
600 V
1.4 V
17 ns
150 °C
Single die
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI / RFI
in high frequency power conditioning systems. The softness
of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Repetitive peak forward current
Maximum power dissipation
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 116 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
4
25
16
10
-55 to +150
W
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
See fig. 1
Maximum reverse
leakage current
Junction capacitance
Series inductance
SYMBOL
V
BR
,
V
R
V
F
I
R
= 100 μA
I
F
= 4 A
I
F
= 8 A
I
F
= 4 A, T
J
= 125 °C
I
R
C
T
L
S
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.5
1.8
1.4
0.17
44
4
8.0
MAX.
-
1.8
2.2
1.7
3.0
300
8
-
μA
pF
nH
V
UNITS
Revision: 24-Nov-16
Document Number: 93473
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

VS-HFA04SD60SL-M3 Related Products

VS-HFA04SD60SL-M3 VS-HFA04SD60SR-M3
Description DIODE GEN PURP 600V 4A TO252 DIODE GEN PURP 600V 4A TO252
Maker Vishay Vishay
Parts packaging code TO-252AA TO-252AA
package instruction R-PSSO-G2 R-PSSO-G2
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features FREE WHEELING DIODE FREE WHEELING DIODE
application ULTRA FAST SOFT RECOVERY HIGH POWER ULTRA FAST SOFT RECOVERY HIGH POWER
Shell connection CATHODE CATHODE
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.7 V 1.7 V
JEDEC-95 code TO-252AA TO-252AA
JESD-30 code R-PSSO-G2 R-PSSO-G2
Maximum non-repetitive peak forward current 25 A 25 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 4 A 4 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 600 V
Maximum reverse recovery time 0.042 µs 0.042 µs
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
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