VS-HFA04SD60S-M3
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Vishay Semiconductors
HEXFRED
®
,
Ultrafast Soft Recovery Diode, 4 A
2, 4
FEATURES
Ultrafast recovery time
Ultrasoft recovery
Very low I
RRM
Very low Q
rr
Guaranteed avalanche
Specified at operating temperature
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
•
•
•
•
•
•
•
D-PAK (TO-252AA)
TO-252AA (D-PAK)
1
N/C
3
Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-252AA (D-PAK)
4A
600 V
1.4 V
17 ns
150 °C
Single die
BENEFITS
•
•
•
•
•
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI / RFI
in high frequency power conditioning systems. The softness
of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Repetitive peak forward current
Maximum power dissipation
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 116 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
4
25
16
10
-55 to +150
W
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
See fig. 1
Maximum reverse
leakage current
Junction capacitance
Series inductance
SYMBOL
V
BR
,
V
R
V
F
I
R
= 100 μA
I
F
= 4 A
I
F
= 8 A
I
F
= 4 A, T
J
= 125 °C
I
R
C
T
L
S
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.5
1.8
1.4
0.17
44
4
8.0
MAX.
-
1.8
2.2
1.7
3.0
300
8
-
μA
pF
nH
V
UNITS
Revision: 24-Nov-16
Document Number: 93473
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-HFA04SD60S-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μA, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
dI
(rec)M
/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 4 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
17
28
38
2.9
3.7
40
70
280
235
MAX.
-
42
57
5.2
6.7
60
105
-
-
A
ns
UNITS
Reverse recovery charge
nC
Rate of fall of recovery current
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Weight
Mounting torque
Marking device
Case style TO-252AA (D-PAK)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
Typical socket mount
TEST CONDITIONS
MIN.
-55
-
-
-
-
6.0
(5.0)
TYP.
-
-
-
2.0
0.07
-
MAX.
150
5.0
°C/W
80
-
-
12
(10)
g
oz.
kgf · cm
(lbf
in)
UNITS
°C
HFA04SD60S
Revision: 24-Nov-16
Document Number: 93473
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA04SD60S-M3
www.vishay.com
Vishay Semiconductors
1000
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (µA)
100
10
1
T
J
= 150 °C
10
T
J
= 125 °C
1
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 25 °C
0.1
0.01
0.001
0.1
0
1
2
3
4
5
6
0
100
200
300
400
500
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10
1
1
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
t
1
t
2
0.1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.0001
0.001
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
0.01
0.00001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 24-Nov-16
Document Number: 93473
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA04SD60S-M3
www.vishay.com
50
I
F
= 8 A
I
F
= 4 A
40
200
180
160
140
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 8 A
I
F
= 4 A
Vishay Semiconductors
Q
rr
(nC)
30
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
20
100
1000
t
rr
(ns)
120
100
80
60
40
20
100
1000
dI
F
/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
14
12
10
I
F
= 8 A
I
F
= 4 A
1000
I
F
= 8 A
I
F
= 4 A
8
6
4
2
0
100
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
1000
dI
(rec)M
/dt (A/µs)
I
RR
(A)
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
100
100
1000
dI
F
/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt
Revision: 24-Nov-16
Document Number: 93473
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA04SD60S-M3
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 24-Nov-16
Document Number: 93473
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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