High Resolution Slotted Optical
Switch
OPB847TX, OPB847TXV, OPB848TX,
OPB848TXV
Features:
Non-contact switching
Apertured for high resolution
Hermetically sealed components
TX and TXV devices processed to MIL-PRF-19500
Description:
The OPB847TX, OPB847TXV, OPB848TX and OPB848TXV each consist of a gallium aluminum arsenide LED and a silicon
phototransistor, which is soldered into a printed PCBoard and then mounted in a high‐temperature plas c housing on
opposite sides of a 0.10 inch (2.54 mm) wide slot. Both device types have a 0.025 inch by 0.060 inch (0.635 mm by 1.524
mm) aperture in front of the phototransistor for high resolu on posi oning sensing. Phototransistor switching takes place
when an opaque object passes through the slot.
TX and TXV device components are processed to OPTEK’s military screening program pa erned a er MIL‐PRF‐19500.
Please refer to Applica on Bulle ns 208 and 210 for addi onal design informa on and reliability (degrada on) data.
Contact your local representa ve or OPTEK for more informa on.
Applications:
Non‐contact object sensing
Assembly line automa on
Machine automa on
Equipment safety
Machine safety
Part Number
OPB847TX
OPB847TXV
OPB848TX
OPB848TXV
LED Peak
Wavelength
890 nm
890 nm
Sensor
Slot Width /
Depth
Aperture
Emi er/Sensor
Lead Length /
Spacing
Transistor
0.100" / 0.250” 0.025" / 0.025" 0.425" / 0.300"
Transistor
0.100" / 0.250” 0.025" / 0.025" 0.425" / 0.300"
1
4
2
3
Pin #
1
2
3
4
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
Descrip on
Anode
Cathode
Emi er
Collector
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
08/2016 Page 1
High Resolution Slotted Optical
Switch
OPB847TX, OPB847TXV, OPB848TX,
OPB848TXV
Absolute Maximum Ra ngs
(T
A
= 25° C unless otherwise noted)
Opera ng Temperature Range
Storage Temperature Range
Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 seconds with soldering iron]
Input Diode
Forward DC Current
Reverse Voltage
Power Dissipa on
(2)
Output Phototransistor
Collector‐Emi er Voltage
Emi er‐Collector Voltage
Power Dissipa on
(2)
50 V
7 V
100 mW
50 mA
2 V
100 mW
‐65° C to +125° C
‐65° C to +150° C
260° C
Electrical Characteris cs
(T
A
= 25° C unless otherwise noted)
SYMBOL
Input Diode
1.00
V
F
Forward Voltage
(4)
1.20
0.80
I
R
Reverse Current
‐
1.35
1.55
1.20
0.10
1.70
1.90
1.60
100
µA
V
I
F
= 20 mA
I
F
= 20 mA, T
A
= ‐55° C
I
F
= 20 mA, T
A
= 100° C
V
R
= 2 V
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Output Phototransistor
V
(BR)CEO
V
(BR)ECO
I
C(OFF)
Notes:
(1)
(2)
(3)
(4)
Collector‐Emi er Breakdown Voltage
Emi er‐Collector Breakdown Voltage
Collector‐Emi er Dark Current
50
7
‐
‐
110
10
0.20
10
‐
‐
100
100
V
V
nA
µA
I
C
= 1 mA, I
F
= 0
I
E
= 100 µA, I
F
= 0
V
CE
= 10 V, I
F
= 0
V
CE
= 10 V, I
F
= 0, T
A
= 100° C
Dura on can be extended to 10 seconds maximum when flow soldering.
Derate linearly 1.00 mW/° C above 25° C.
Methanol and isopropanol are recommended as cleaning agents.
Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Hea ng due to increased pulse rate or pulse width can cause
change in measurement results.
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
08/2016 Page 2
High Resolution Slotted Optical
Switch
OPB847TX, OPB847TXV, OPB848TX,
OPB848TXV
Electrical Characteris cs
(T
A
= 25°C unless otherwise noted)
SYMBOL
Combined
On‐State Collector Current
(1)
OPB847 (TX, TXV)
OPB847 (TX, TXV)
OPB847 (TX, TXV)
OPB848 (TX, TXV)
OPB848 (TX, TXV)
OPB848 (TX, TXV)
Collector‐Emi er Satura on Voltage
OPB847 (TX, TXV)
OPB848 (TX, TXV)
Output Rise Time
OPB847 (TX, TXV)
OPB848 (TX, TXV)
Output Fall Time
OPB847 (TX, TXV)
OPB848 (TX, TXV)
4.00
2.50
2.50
1.00
0.60
0.60
‐
‐
‐
‐
‐
‐
‐
‐
0.20
0.20
12
8
12
8
‐
‐
‐
‐
‐
‐
0.30
0.30
20
15
20
15
V
CE
= 10 V, I
F
= 20 mA,
V
CE
= 10 V, I
F
= 20 mA, T
A
= ‐55° C
V
CE
= 10 V, I
F
= 20 mA, T
A
= 100° C
V
CE
= 10 V, I
F
= 20 mA,
V
CE
= 10 V, I
F
= 20 mA, T
A
= ‐55° C
V
CE
= 10 V, I
F
= 20 mA, T
A
= 100° C
I
C
= 2 mA, I
F
= 20 mA
I
C
= 500 µA, I
F
= 20 mA
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
I
C(ON)
mA
V
CE(SAT)
V
t
r
µs
V
CC
= 10 V, I
F
= 20 mA, R
L
= 1000Ω
t
f
Notes:
(1) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Hea ng due to increased pulse rate or pulse width can cause
change in measurement results.
Flag Next to Emi er
1.20
Flag Next to Sensor
1.20
Flag in Middle of Slot
1.20
1.00
1.00
1.00
Typical I
C(ON)
Response (mA)
Typical I
C(ON)
Response (mA)
Typical I
C(ON)
Response (mA)
0.80
0.80
0.80
0.60
0.60
0.60
0.40
0.40
0.40
Right to Left
Left to Right
Top to Bottom
0.20
Right to Left
Left to Right
Top to Bottom
0.20
Right to Left
Left to Right
Top to Bottom
0.20
0.00
0.00
0.05
0.10
0.15
0.20
0.25
0.00
0.00
0.05
0.10
0.15
0.20
0.25
0.00
0.00
0.05
0.10
0.15
0.20
0.25
Displacement Distance (inches)
Displacement Distance (inches)
Displacement Distance (inches)
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
08/2016 Page 3
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