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MT48LC4M16A2P-7E AIT:J

Description
IC DRAM 64M PARALLEL 54TSOP
Categorystorage   
File Size4MB,83 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT48LC4M16A2P-7E AIT:J Overview

IC DRAM 64M PARALLEL 54TSOP

MT48LC4M16A2P-7E AIT:J Parametric

Parameter NameAttribute value
memory typeVolatile
memory formatDRAM
technologySDRAM
storage64Mb (4M x 16)
Clock frequency143MHz
Write cycle time - words, pages14ns
interview time5.4ns
memory interfacein parallel
Voltage - Power3 V ~ 3.6 V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount
Package/casing54-TSOP (0.400", 10.16mm wide)
Supplier device packaging54-TSOP II
64Mb: x8, x16 SDRAM
Features
SDR SDRAM
MT48LC8M8A2 – 2 Meg x 8 x 4 Banks
MT48LC4M16A2 – 1 Meg x 16 x 4 Banks
Features
• PC100- and PC133-compliant
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal, pipelined operation; column address can
be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto precharge, includes concurrent auto precharge
and auto refresh modes
• Self refresh mode (not available on AAT devices)
• Refresh
– 64ms, 4096-cycle refresh (15.6µs/row)
(industrial)
– 16ms, 4096-cycle refresh (3.9µs/row)
(automotive)
• LVTTL-compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• AEC-Q100
• PPAP submission
• 8D response time
Options
• Configuration
– 8 Meg x 8 (2 Meg x 8 x 4 banks)
– 4 Meg x 16 (1 Meg x 16 x 4 banks)
• Write recovery (
t
WR)
t
WR = 2 CLK
1
• Plastic package – OCPL
2
– 54-pin TSOP II (400 mil)
– 54-pin TSOP II (400 mil) Pb-free,
RoHS-compliant
– 54-ball VFBGA 8mm x 8mm
(x16 only)
– 54-ball VFBGA 8mm x 16mm, Pb-
free, RoHS-compliant (x16 only)
• Timing – cycle time
– 6ns @ CL = 3 (x16 only)
– 7.5ns @ CL = 3 (PC133)
– 7.5ns @ CL = 2 (PC133)
• Self refresh
– Standard
– Low power
• Operating temperature range
– Industrial (–40˚C to +85˚C)
– Automotive (–40˚C to +105˚C)
• Revision
Notes:
Marking
8M8
4M16
A2
TG
P
F4
B4
3
-6A
-75
-7E
None
L
AIT
AAT
3
:J
1. See Micron technical note TN-48-05 on
Micron's Web site.
2. Off-center parting line.
3. Contact Micron for availability.
Table 1: Key Timing Parameters
CL = CAS (READ) latency
Speed Grade
-6A
-7E
-75
-7E
-75
Clock
Frequency
167 MHz
143 MHz
133 MHz
133 MHz
100 MHz
Access Time
CL = 2
5.4ns
6ns
CL = 3
5.5ns
5.4ns
5.4ns
Setup Time
1.5ns
1.5ns
1.5ns
1.5ns
1.5ns
Hold Time
1ns
0.8ns
0.8ns
0.8ns
0.8ns
09005aef84942e37
64mb_ait_aat_sdr.pdf - Rev. D 6/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.

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Description IC DRAM 64M PARALLEL 54TSOP IC DRAM 64M PARALLEL 54TSOP IC DRAM 64M PARALLEL 54TSOP IC DRAM 64M PARALLEL 54TSOP IC DRAM 64M PARALLEL 54TSOP IC DRAM 64M PARALLEL 54TSOP
memory type Volatile Volatile Volatile Volatile Volatile Volatile
memory format DRAM DRAM DRAM DRAM DRAM DRAM
technology SDRAM SDRAM SDRAM SDRAM SDRAM SDRAM
storage 64Mb (4M x 16) 64Mb (4M x 16) 64Mb (4M x 16) 64Mb (4M x 16) 64Mb (4M x 16) 64Mb (4M x 16)
Clock frequency 143MHz 167MHz 167MHz 143MHz 167MHz 167MHz
Write cycle time - words, pages 14ns 12ns 12ns 14ns 12ns 12ns
interview time 5.4ns 5.4ns 5.4ns 5.4ns 5.4ns 5.4ns
memory interface in parallel in parallel in parallel in parallel in parallel in parallel
Voltage - Power 3 V ~ 3.6 V 3 V ~ 3.6 V 3 V ~ 3.6 V 3 V ~ 3.6 V 3 V ~ 3.6 V 3 V ~ 3.6 V
Operating temperature -40°C ~ 85°C(TA) -40°C ~ 105°C(TA) -40°C ~ 85°C(TA) -40°C ~ 85°C(TA) -40°C ~ 105°C(TA) -40°C ~ 85°C(TA)
Installation type surface mount surface mount surface mount surface mount surface mount surface mount
Package/casing 54-TSOP (0.400", 10.16mm wide) 54-TSOP (0.400", 10.16mm wide) 54-TSOP (0.400", 10.16mm wide) 54-TSOP (0.400", 10.16mm wide) 54-TSOP (0.400", 10.16mm wide) 54-TSOP (0.400", 10.16mm wide)
Supplier device packaging 54-TSOP II 54-TSOP II 54-TSOP II 54-TSOP II 54-TSOP II 54-TSOP II
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