MCP14A0051/2
0.5A MOSFET Driver
With Low Threshold Input And Enable
Features
• High Peak Output Current: 0.5A (typical)
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• High Capacitive Load Drive Capability:
- 1000 pF in 40 ns (typical)
• Short Delay Times: 33 ns (t
D1
), 24 ns (t
D2
) (typical)
• Low Supply Current: 375 µA (typical)
• Low Voltage Threshold Input and Enable with
Hysteresis
• Latch-Up Protected: Withstands 500 mA Reverse
Current
• Space-Saving Packages:
- 6L SOT-23
- 6L 2 x 2 DFN
General Description
The MCP14A0051/2 devices are high-speed MOSFET
drivers that are capable of providing up to 0.5A of peak
current while operating from a single 4.5V to 18V
supply. The inverting (MCP14A0051) or non-inverting
(MCP14A0052) single-channel output is directly
controlled from either TTL or CMOS (2V to 18V) logic.
These devices also feature low shoot-through current,
matched rise and fall times, and short propagation
delays which make them ideal for high switching
frequency applications.
The MCP14A0051/2 family of devices offer enhanced
control with Enable functionality. The active-high
Enable pin can be driven low to drive the output of the
MCP14A0051/2 low regardless of the status of the
Input pin. An integrated pull-up resistor allows the user
to leave the Enable pin floating for standard operation.
Additionally, the MCP14A0051/2 devices feature sepa-
rate ground pins (A
GND
and GND), allowing greater
noise isolation between the level-sensitive Input/
Enable pins and the fast, high-current transitions of the
push-pull output stage.
These devices are highly latch-up resistant under any
condition within their power and voltage ratings. They
can accept up to 500 mA of reverse current being
forced back into their outputs without damage or logic
upset. All terminals are fully protected against
electrostatic discharge (ESD) up to 1.75 kV (HBM) and
100V (MM).
Applications
•
•
•
•
•
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Level Translator
Motor and Solenoid Drive
Package Types
6-Lead SOT-23
V
DD
A
GND
IN
1
2
3
MCP14A0051
MCP14A0052
6
5
4
MCP14A0052
OUT
MCP14A0051
OUT 1
GND 2
EN 3
EP
7
2x2 DFN-6*
6 V
DD
5 IN
4 A
GND
OUT
GND
EN
OUT
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
2014 Microchip Technology Inc.
DS20005369A-page 1
MCP14A0051/2
Functional Block Diagram
V
DD
Internal
Pull-Up
Enable
V
REF
AGND
V
DD
Input
V
REF
MCP14A0051
Inverting
MCP14A0052
Non-Inverting
Inverting
Output
Non-Inverting
AGND
GND
DS20005369A-page 2
2014 Microchip Technology Inc.
MCP14A0051/2
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings †
V
DD
, Supply Voltage............................................. +20V
V
IN
, Input Voltage........... (V
DD
+ 0.3V) to (GND - 0.3V)
V
EN
, Enable Voltage....... (V
DD
+ 0.3V) to (GND - 0.3V)
Package Power Dissipation (T
A
= +50°C)
6L SOT-23.................................................... 0.52 W
6L 2 x 2 DFN ................................................ 1.09 W
ESD Protection on all Pins ....................1.75 kV (HBM)
....................................................................100V (MM)
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C, with 4.5V
V
DD
18V.
Parameters
Input
Input Voltage Range
Logic ‘1’ High Input Voltage
Logic ‘0’ Low Input Voltage
Input Voltage Hysteresis
Input Current
Enable
Enable Voltage Range
Logic ‘1’ High Enable Voltage
Logic ‘0’ Low Enable Voltage
Enable Voltage Hysteresis
Enable Pin Pull-Up Resistance
Enable Input Current
Propagation Delay
Propagation Delay
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection Withstand
Reverse Current
Switching Time
(Note
1)
Rise Time
t
R
—
40
51
ns
V
DD
= 18V, C
L
= 1000 pF, see
Figure 4-1, Figure 4-2
(Note
1)
V
DD
= 18V, C
L
= 1000 pF, see
Figure 4-1, Figure 4-2
(Note
1)
V
OH
V
OL
R
OH
R
OL
I
PK
I
REV
V
DD
- 0.025
—
—
—
—
0.5
—
—
12.5
7.5
0.5
—
—
0.025
17
10
—
—
V
V
Ω
Ω
A
A
I
OUT
= 0A
I
OUT
= 0A
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
DD
= 18V (Note
1)
Duty cycle
2%, t
300 µs
(Note
1)
V
EN
V
EH
V
EL
V
HYST(EN)
R
ENBL
I
EN
t
D3
t
D4
GND - 0.3V
2.0
—
—
—
—
—
—
—
1.6
1.2
0.4
1.8
10
35
23
V
DD
+ 0.3
—
0.8
—
—
—
43
31
V
V
V
V
MΩ
µA
ns
ns
V
DD
= 18V, ENB = A
GND
V
DD
= 18V, ENB = A
GND
V
DD
= 18V, V
EN
= 5V, see
Figure 4-3,
(Note
1)
V
DD
= 18V, V
EN
= 5V, see
Figure 4-3,
(Note
1)
V
IN
V
IH
V
IL
V
HYST(IN)
I
IN
GND - 0.3V
2.0
—
—
-1
—
1.6
1.2
0.4
—
V
DD
+ 0.3
—
0.8
—
+1
V
V
V
V
µA
0V
V
IN
V
DD
Sym.
Min.
Typ.
Max.
Units
Conditions
Fall Time
t
F
—
28
39
ns
Note 1:
Tested during characterization, not production tested.
2014 Microchip Technology Inc.
DS20005369A-page 3
MCP14A0051/2
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C, with 4.5V
V
DD
18V.
Parameters
Delay Time
Sym.
t
D1
Min.
—
Typ.
33
Max.
41
Units
ns
Conditions
V
DD
= 18V, V
IN
= 5V, see
Figure 4-1, Figure 4-2,
(Note
1)
V
DD
= 18V, V
IN
= 5V, see
Figure 4-1, Figure 4-2,
(Note
1)
Delay Time
t
D2
—
24
32
ns
Power Supply
Supply Voltage
V
DD
I
DD
Power Supply Current
I
DD
I
DD
I
DD
Note 1:
4.5
—
—
—
—
—
330
360
360
375
18
560
580
580
600
V
µA
µA
µA
µA
V
IN
= 3V, V
EN
= 3V
V
IN
= 0V, V
EN
= 3V
V
IN
= 3V, V
EN
= 0V
V
IN
= 0V, V
EN
= 0V
Tested during characterization, not production tested.
DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE) (Note
1)
Electrical Specifications:
Unless otherwise indicated, over the operating range with 4.5V
V
DD
18V.
Parameters
Input
Input Voltage Range
Logic ‘1’ High Input Voltage
Logic ‘0’ Low Input Voltage
Input Voltage Hysteresis
Input Current
Enable
Enable Voltage Range
Logic ‘1’ High Enable Voltage
Logic ‘0’ Low Enable Voltage
Enable Voltage Hysteresis
Enable Input Current
Propagation Delay
Propagation Delay
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Note 1:
V
OH
V
OL
R
OH
R
OL
V
DD
- 0.025
—
—
—
—
—
—
—
—
0.025
24
15
V
V
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
EN
V
EH
V
EL
V
HYST(EN)
I
EN
t
D3
t
D4
GND - 0.3V
2.0
—
—
—
—
—
—
1.6
1.2
0.4
12
33
25
V
DD
+ 0.3
—
0.8
—
—
41
33
V
V
V
V
µA
ns
ns
V
DD
= 18V, ENB = A
GND
V
DD
= 18V, V
EN
= 5V, T
A
= +125°C,
see
Figure 4-3
V
DD
= 18V, V
EN
= 5V, T
A
= +125°C,
see
Figure 4-3
V
IN
V
IH
V
IL
V
HYST(IN)
I
IN
GND - 0.3V
2.0
—
—
-10
—
1.6
1.2
0.4
—
V
DD
+ 0.3
—
0.8
—
+10
V
V
V
V
µA
0V
V
IN
V
DD
Sym.
Min.
Typ.
Max.
Units
Conditions
Tested during characterization, not production tested.
DS20005369A-page 4
2014 Microchip Technology Inc.
MCP14A0051/2
DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE) (Note
1)
(CONTINUED)
Electrical Specifications:
Unless otherwise indicated, over the operating range with 4.5V
V
DD
18V.
Parameters
Switching Time (Note
1)
Rise Time
t
R
—
45
56
ns
V
DD
= 18V, C
L
= 1000 pF,
T
A
= +125°C, see
Figure 4-1,
Figure 4-2
V
DD
= 18V, C
L
= 1000 pF,
T
A
= +125°C, see
Figure 4-1,
Figure 4-2
V
DD
= 18V, V
IN
= 5V, T
A
= +125°C,
see
Figure 4-1, Figure 4-2
V
DD
= 18V, V
IN
= 5V, T
A
= +125°C,
see
Figure 4-1, Figure 4-2
V
uA
uA
uA
uA
V
IN
= 3V, V
EN
= 3V
V
IN
= 0V, V
EN
= 3V
V
IN
= 3V, V
EN
= 0V
V
IN
= 0V, V
EN
= 0V
Sym.
Min.
Typ.
Max.
Units
Conditions
Fall Time
t
F
—
34
45
ns
Delay Time
Delay Time
Power Supply
Supply Voltage
t
D1
t
D2
—
—
32
27
40
35
ns
V
DD
I
DD
I
DD
I
DD
I
DD
4.5
—
—
—
—
—
—
—
—
—
18
760
780
780
800
Power Supply Current
Note 1:
Tested during characterization, not production tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V
Parameter
Temperature Ranges
Specified Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 6LD 2x2 DFN
Thermal Resistance, 6LD SOT-23
JA
JA
—
—
91
192
—
—
°C/W
°C/W
T
A
T
J
T
A
-40
—
-65
—
—
—
+125
+150
+150
°C
°C
°C
Sym.
Min.
Typ.
Max.
Units
Comments
2014 Microchip Technology Inc.
DS20005369A-page 5
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