GS81302T11GE-350 datasheet, PDF

Datasheet> All Categories > storage> storage> GS81302T11GE-350

GS81302T11GE-350: DescriptionStatic random access memory 1.8 or 1.5V 16M x 9 144M; Categorystorage storage; File Size2MB，30 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/; Environmental Compliance

Download Datasheet Parametric Compare View All

GS81302T11GE-350 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	GS81302T11GE-350	-	-	View	Buy Now

GS81302T11GE-350 Overview

Static random access memory 1.8 or 1.5V 16M x 9 144M

GS81302T11GE-350 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	GSI Technology
Parts packaging code	BGA
package instruction	LBGA,
Contacts	165
Reach Compliance Code	compliant
ECCN code	3A991.B.2.B
Factory Lead Time	12 weeks
Maximum access time	0.45 ns
Other features	PIPELINED ARCHITECTURE
JESD-30 code	R-PBGA-B165
JESD-609 code	e1
length	17 mm
memory density	150994944 bit
Memory IC Type	DDR SRAM
memory width	9
Humidity sensitivity level	3
Number of functions	1
Number of terminals	165
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX9
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	1.5 mm
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15 mm

Preview

Download Datasheet

View All

GS81302T06/11/20/38E-500/450/400/350

165-Bump BGA

Commercial Temp

Industrial Temp

Features

• 2.5 Clock Latency

• Simultaneous Read and Write SigmaDDR

Interface

• JEDEC-standard pinout and package

• Double Data Rate interface

• Byte Write controls sampled at data-in time

• Burst of 2 Read and Write

• On-Die Termination (ODT) on Data (D), Byte Write (BW),

and Clock (K, K) inputs

• 1.8 V +100/–100 mV core power supply

• 1.5 V or 1.8 V HSTL Interface

• Pipelined read operation

• Fully coherent read and write pipelines

• ZQ pin for programmable output drive strength

• Data Valid Pin (QVLD) Support

• IEEE 1149.1 JTAG-compliant Boundary Scan

• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package

• RoHS-compliant 165-bump BGA package available

144Mb SigmaDDR

-II+

Burst of 2 SRAM

500 MHz–350 MHz

1.8 V V

1.8 V or 1.5 V I/O

SRAMs are just one element in a family of low power, low

voltage HSTL I/O SRAMs designed to operate at the speeds

needed to implement economical high performance

networking systems.

Clocking and Addressing Schemes

The GS81302T06/11/20/38E SigmaDDR-II+ SRAMs are

synchronous devices. They employ two input register clock

inputs, K and K. K and K are independent single-ended clock

inputs, not differential inputs to a single differential clock input

buffer.

Each internal read and write operation in a SigmaDDR-II+ B2

RAM is two times wider than the device I/O bus. An input data

bus de-multiplexer is used to accumulate incoming data before

it is simultaneously written to the memory array. An output

data multiplexer is used to capture the data produced from a

single memory array read and then route it to the appropriate

output drivers as needed. Therefore, the address field of a

SigmaDDR-II+ B2 RAM is always one address pin less than

the advertised index depth (e.g., the 16M x 8 has an 8M

addressable index).

SigmaDDR-II™ Family Overview

The GS81302T06/11/20/38E are built in compliance with the

SigmaDDR-II+ SRAM pinout standard for Common I/O

synchronous SRAMs. They are 150,994,944-bit (144Mb)

SRAMs. The GS81302T06/11/20/38E SigmaDDR-II+

Parameter Synopsis

-500

tKHKH

tKHQV

2.0 ns

0.45 ns

-450

2.2 ns

0.45 ns

-400

2.5 ns

0.45 ns

-350

2.86 ns

0.45 ns

Rev: 1.03d 8/2017

1/29

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS81302T11GE-350 Related Products

	GS81302T11GE-350	GS81302T38E-500	GS81302T11GE-400	GS81302T11E-350	GS81302T06GE-450	GS81302T06E-450	GS81302T11E-400	GS81302T38GE-500	GS81302T20E-400I	GS81302T11GE-450
Description	Static random access memory 1.8 or 1.5V 16M x 9 144M	Static random access memory 1.8 or 1.5V 4M x 36 144M	Static random access memory 1.8 or 1.5V 16M x 9 144M	Static random access memory 1.8 or 1.5V 16M x 9 144M	Static random access memory 1.8 or 1.5V 16M x 8 144M	Static random access memory 1.8 or 1.5V 16M x 8 144M	Static random access memory 1.8 or 1.5V 16M x 9 144M	Static random access memory 1.8 or 1.5V 4M x 36 144M	Static random access memory 1.8 or 1.5V 8M x 18 144M	Static random access memory 1.8 or 1.5V 16M x 9 144M
Maker	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology
Maximum operating temperature	70 °C	+ 70 C	70 °C	70 °C	70 °C	70 °C	70 °C	+ 70 C	85 °C	70 °C
organize	16MX9	4 M x 36	16MX9	16MX9	16MX8	16MX8	16MX9	4 M x 36	8MX18	16MX9
Is it lead-free?	Lead free	-	Lead free	Contains lead	Lead free	Contains lead	Contains lead	-	Contains lead	Lead free
Is it Rohs certified?	conform to	-	conform to	incompatible	conform to	incompatible	incompatible	-	incompatible	conform to
Parts packaging code	BGA	-	BGA	BGA	BGA	BGA	BGA	-	BGA	BGA
package instruction	LBGA,	-	LBGA,	LBGA,	LBGA,	LBGA,	LBGA,	-	LBGA,	LBGA,
Contacts	165	-	165	165	165	165	165	-	165	165
Reach Compliance Code	compliant	-	compliant	compliant	compliant	compliant	compliant	-	compliant	compliant
ECCN code	3A991.B.2.B	-	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	-	3A991.B.2.B	3A991.B.2.B
Factory Lead Time	12 weeks	-	12 weeks	12 weeks	12 weeks	12 weeks	12 weeks	-	12 weeks	12 weeks
Maximum access time	0.45 ns	-	0.45 ns	0.45 ns	0.37 ns	0.37 ns	0.45 ns	-	0.45 ns	0.37 ns
Other features	PIPELINED ARCHITECTURE	-	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	-	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
JESD-30 code	R-PBGA-B165	-	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	-	R-PBGA-B165	R-PBGA-B165
length	17 mm	-	17 mm	17 mm	17 mm	17 mm	17 mm	-	17 mm	17 mm
memory density	150994944 bit	-	150994944 bit	150994944 bit	134217728 bit	134217728 bit	150994944 bit	-	150994944 bit	150994944 bit
Memory IC Type	DDR SRAM	-	DDR SRAM	DDR SRAM	DDR SRAM	DDR SRAM	DDR SRAM	-	DDR SRAM	DDR SRAM
memory width	9	-	9	9	8	8	9	-	18	9
Number of functions	1	-	1	1	1	1	1	-	1	1
Number of terminals	165	-	165	165	165	165	165	-	165	165
word count	16777216 words	-	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	-	8388608 words	16777216 words
character code	16000000	-	16000000	16000000	16000000	16000000	16000000	-	8000000	16000000
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LBGA	-	LBGA	LBGA	LBGA	LBGA	LBGA	-	LBGA	LBGA
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE	-	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	-	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	-	260	NOT SPECIFIED	260	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	260
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
Maximum seat height	1.5 mm	-	1.5 mm	1.5 mm	1.5 mm	1.5 mm	1.5 mm	-	1.5 mm	1.5 mm
Maximum supply voltage (Vsup)	1.9 V	-	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	-	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	-	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	-	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	-	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	-	1.8 V	1.8 V
surface mount	YES	-	YES	YES	YES	YES	YES	-	YES	YES
technology	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS	-	CMOS	CMOS
Temperature level	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	-	INDUSTRIAL	COMMERCIAL
Terminal form	BALL	-	BALL	BALL	BALL	BALL	BALL	-	BALL	BALL
Terminal pitch	1 mm	-	1 mm	1 mm	1 mm	1 mm	1 mm	-	1 mm	1 mm
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
width	15 mm	-	15 mm	15 mm	15 mm	15 mm	15 mm	-	15 mm	15 mm

Recommended Resources

AC voltage stabilizing circuit (2)

Precision Sensor Bridge Isolation Transmitter

Portable CO detection circuit using dual-electrode sensor

Biogas detection alarm

AC contactor power-saving silent operation circuit (3)

810 computer motherboard circuit diagram_13

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components