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GS8662S18BGD-400

Description
Static random access memory 1.8 or 1.5V 4M x 18 72M
Categorystorage    storage   
File Size366KB,35 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance
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GS8662S18BGD-400 Overview

Static random access memory 1.8 or 1.5V 4M x 18 72M

GS8662S18BGD-400 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGSI Technology
Parts packaging codeBGA
package instructionLBGA,
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Factory Lead Time8 weeks
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
length15 mm
memory density75497472 bit
Memory IC TypeSTANDARD SRAM
memory width18
Number of functions1
Number of terminals165
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX18
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
GS8662S08/09/18/36BD-400/350/333/300/250
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaSIO™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• DLL circuitry for wide output data valid window and future
frequency scaling
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ mode pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
72Mb SigmaSIO
TM
DDR -II
Burst of 2 SRAM
Clocking and Addressing Schemes
400 MHz–250 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
A Burst of 2SigmaSIO DDR-II SRAM is a synchronous
device. It employs dual input register clock inputs, K and K.
The device also allows the user to manipulate the output
register clock input quasi independently with dual output
register clock inputs, C and C. If the C clocks are tied high, the
K clocks are routed internally to fire the output registers
instead. Each Burst of 2SigmaSIO DDR-II SRAM also
supplies Echo Clock outputs, CQ and CQ, which are
synchronized with read data output. When used in a source
synchronous clocking scheme, the Echo Clock outputs can be
used to fire input registers at the data’s destination.
Each internal read and write operation in a SigmaSIO DDR-II
B2 RAM is two times wider than the device I/O bus. An input
data bus de-multiplexer is used to accumulate incoming data
before it is simultaneously written to the memory array. An
output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore, the address
field of a SigmaSIO DDR-II B2 is always one address pin less
than the advertised index depth (e.g., the 8M x 8 has an 4M
addressable index).
SigmaSIO™ Family Overview
GS8662S08/09/18/36BD are built in compliance with the
SigmaSIO DDR-II SRAM pinout standard for Separate I/O
synchronous SRAMs. They are 75,497,472-bit (72Mb)
SRAMs. These are the first in a family of wide, very low
voltage HSTL I/O SRAMs designed to operate at the speeds
needed to implement economical high performance
networking systems.
Parameter Synopsis
-400
tKHKH
tKHQV
2.5 ns
0.45 ns
-350
2.86 ns
0.45 ns
-333
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
Rev: 1.02d 8/2017
1/35
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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