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GS8342TT11BD-400

Description
Static random access memory 1.8 or 1.5V 4M x 9 36M
Categorystorage    storage   
File Size335KB,30 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
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GS8342TT11BD-400 Overview

Static random access memory 1.8 or 1.5V 4M x 9 36M

GS8342TT11BD-400 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instructionLBGA, BGA165,11X15,40
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Factory Lead Time10 weeks
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)400 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B165
JESD-609 codee0
length15 mm
memory density37748736 bit
Memory IC TypeDDR SRAM
memory width9
Number of functions1
Number of terminals165
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX9
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum seat height1.4 mm
Minimum standby current1.7 V
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
Base Number Matches1
GS8342TT06/11/20/38BD-550/500/450/400/350
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• 2.5 Clock Latency
• Simultaneous Read and Write SigmaDDR
TM
Interface
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 2 Read and Write
• Dual-Range On-Die Termination (ODT) on Data (D), Byte
Write (BW), and Clock (K, K) inputs
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid Pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
36Mb SigmaDDR
TM
-II+
Burst of 2 SRAM
550 MHz–350 MHz
1.8 V V
DD
1.8 V or 1.5 V I/O
SRAMs are just one element in a family of low power, low
voltage HSTL I/O SRAMs designed to operate at the speeds
needed to implement economical high performance
networking systems.
Clocking and Addressing Schemes
The GS8342TT06/11/20/38BD SigmaDDR-II+ SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer.
Each internal read and write operation in a SigmaDDR-II+ B2
RAM is two times wider than the device I/O bus. An input data
bus de-multiplexer is used to accumulate incoming data before
it is simultaneously written to the memory array. An output
data multiplexer is used to capture the data produced from a
single memory array read and then route it to the appropriate
output drivers as needed. Therefore the address field of a
SigmaDDR-II+ B2 RAM is always one address pin less than
the advertised index depth (e.g., the 4M x 8 has a 2M
addressable index).
SigmaDDR-II™ Family Overview
The GS8342TT06/11/20/38BD are built in compliance with
the SigmaDDR-II+ SRAM pinout standard for Common I/O
synchronous SRAMs. They are 37,748,736-bit (36Mb)
SRAMs. The GS8342TT06/11/20/38BD SigmaDDR-II+
Parameter Synopsis
-550
tKHKH
tKHQV
1.81 ns
0.45 ns
-500
2.0 ns
0.45 ns
-450
2.2 ns
0.45 ns
-400
2.5 ns
0.45 ns
-350
2.86 ns
0.45 ns
Rev: 1.02b 8/2017
1/30
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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