QPA2705
5 W, 28 V, 2.5 – 2.7 GHz GaN PA Module
Product Description
The QPA2705 is an integrated 2-stage Power Amplifier
Module designed for Metro Cell Base Station applications
with 5 W RMS at the device output.
The module is 50 Ω input and output and requires minimal
external components. The module is also compact and
offers a much smaller footprint than traditional discrete
component solutions.
The QPA2705 incorporates a Doherty final stage delivering
high power added efficiency for the entire module at 5 W
average power.
RoHS compliant.
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36 Pin 6x10 mm Plastic Package
Product Features
Operating Frequency Range: 2500-2700 MHz
Band 41, Band 7
Operating Drain Voltage: +28 V
50 Ω Input / Output
Integrated Doherty Final Stage
Gain at 5 W avg.: 34.1 dB
Power Added Efficiency at 5 W avg.: 41.6%
Functional Block Diagram
6x10 mm Plastic Surface Mount Package
Applications
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5G Massive MIMO
W-CDMA / LTE
Macrocell Base Station Driver
Microcell Base Station
Small Cell Final Stage
Active Antenna
General Purpose Applications
Ordering Information
Part No.
QPA2705SB
QPA2705SR
QPA2705TR13
ECCN Description
5A991G Sample Bag – 5 Pieces
5A991G Short Reel – 100 Pieces
5A991G 13” Reel – 2500 Pieces
Tested 2.5 – 2.7 GHz EVB
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QPA2705EVB4B01 EAR99
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1 of 12
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Rev. C
QPA2705
5 W, 28 V, 2.5 – 2.7 GHz GaN PA Module
Absolute Maximum Ratings
2
Parameter
Breakdown Voltage, BV
DG
Gate Voltage (V
G1,2,3
)
Drain Voltage (V
D1,2,3
)
RF Input Power
VSWR Mismatch, P1dB
Pulse (10 % duty cycle,
100 µ width), T = 25 °C
Channel Temperature, T
CH
Storage Temperature
Recommended Operating Conditions
Units
V
V
V
dBm
Range / Value
120
−7 to +2
+40
+22
10:1
275
−65 to +150
Parameter
Operating Temperature
Gate Voltage (V
G1
)
Gate Voltage (V
G2
)
Gate Voltage (V
G3
)
Drain Voltage (V
D1,2,3
)
Quiescent Current (I
DQ1
)
Min
−40
Typ
+25
−2.6
−4.4
−2.6
+28
50
75
Max Units
°C
V
V
V
V
mA
mA
225
°C
°C
°C
Quiescent Current (I
DQ3
)
T
CH
for >10
6
hours MTTF
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical performance is measured under conditions noted in the
electrical specifications table. Specifications are not guaranteed
over all recommended operating conditions.
Electrical Specifications
Parameter
Frequency Range
Driver Quiescent Current
Carrier Quiescent Current
Gain
P3dB
Power Added Efficiency
Raw ACLR
Conditions
Min
2500
Typ
50
75
34.1
45.6
41.6
−29
Max
2700
Units
MHz
mA
mA
dB
dBm
%
dBc
P
AVG
= 37 dBm
3 dB PAR compression
P
AVG
= 37 dBm
P
AVG
= 37 dBm
Test conditions unless otherwise noted: V
D1,2,3
= +28 V, I
DQ1
= 50 mA, I
DQ3
= 75 mA, V
G2
= −4.4 V (typical), T = +25°C, single-carrier,
20 MHz LTE signal with 7.8 dB PAR @ 0.01% CCDF, from EVB measurements at 2600 MHz.
Rev. C
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2 of 12
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QPA2705
5 W, 28 V, 2.5 – 2.7 GHz GaN PA Module
Thermal and Reliability Information
Parameter
Thermal Resistance at
Average Power (θ
JC
), FEA
(1) (2)
Thermal Resistance at
Average Power (θ
JC
), IR
(1) (3)
Test Conditions
T
CASE
= +85°C, T
CH
= 130°C
CW: P
DISS
= 7.3 W, P
OUT
= 5 W
T
CASE
= +85°C, T
CH
= 116°C
CW: P
DISS
= 7.3 W, P
OUT
= 5 W
Value
6.1
4.2
Units
°C / W
°C / W
Notes:
1. Thermal resistance measured to package backside.
2. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless otherwise noted, all
thermal references are FEA.
3. Infrared (IR) thermal values are for reference only and cannot be used to determine performance or reliability.
Median Lifetime
Rev. C
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3 of 12
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QPA2705
5 W, 28 V, 2.5 – 2.7 GHz GaN PA Module
QPA2705 Reference Design
EVB Layout
EVB Schematic
PCB Stackup and Material
Notes:
1. All dimensions are in inches.
2.
PCB is soldered on a 2 inch by 2 inch copper base plate with 0.25 inch thickness.
Bill of Materials – QPA2705 Evaluation Board
Reference Des.
C1, C10
C2, C9, C12
C3, C8, C11
C4, C7, C14
C13, C15, C16
J1, J2
P1, P2
P3
U1
Value
220 µF
8.2 pF
4.7 µF
22,000 pF
10 µF
–
–
–
–
Description
Capacitor, 220 µF
Capacitor, 8.2 pF, ±0.25 pF, 250 V, C0G
Capacitor, 4.7 µF, 10%, 50 V, X7R, 1206
Capacitor, 22,000 pF, 10%, 50 V, X7R, 0603
Capacitor, 10 µF, 10%, 50 V, X7R, 1210
Connector, SMA, 4-Hole Panel Mount Jack
Connector, HDR, ST, PLRZD, 5-Pin, 0.100”
Connector, HDR, ST, 3-PIN, T/H
5 W GaN PA Module
Manuf.
Panasonic
ATC
Murata
Murata
Murata
Gigalane
ITW Pancon
Molex
Qorvo
Part No.
EEEFK1H221P
800A8R2CT250X
GRM31CR71H475KA12L
GRM188R71H223KA01D
GRM32ER71H106KA12L
PAF-S00-000
MPSS100-5-C
22-28-4033
QPA2705
Rev. C
-
4 of 12
-
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QPA2705
5 W, 28 V, 2.5 – 2.7 GHz GaN PA Module
Performance Plots
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
Gain vs. Average Output Power
V
D1,2,3
= +28 V, I
DQ1
= 50 mA, I
DQ3
= 75 mA, V
G2
= −4.4 V
1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
60
55
PAE vs. Average Output Power
V
D1,2,3
= +28 V, I
DQ1
= 50 mA, I
DQ3
= 75 mA, V
G2
= −4.4 V
1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
Power Added Efficiency (%)
50
45
40
35
2500 MHz
Gain (dB)
2500 MHz
2600 MHz
2700 MHz
30
25
20
15
2600 MHz
2700 MHz
Temp. = +25°C
10
Temp. = +25°C
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41
Average Output Power (dBm)
Average Output Power (dBm)
47
Peak Power vs. Average Output Power
V
D1,2,3
= +28 V, I
DQ1
= 50 mA, I
DQ3
= 75 mA, V
G2
= −4.4 V
1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
-18
-20
-22
-24
ACPR vs. Average Output Power
V
D1,2,3
= +28 V, I
DQ1
= 50 mA, I
DQ3
= 75 mA, V
G2
= −4.4 V
1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
Peak Power at 0.01% CCDF (dBm)
46
45
44
43
42
41
40
39
38
37
36
35
ACPR (dBc)
-26
-28
-30
-32
-34
-36
2500 MHz
2600 MHz
2700 MHz
2500 MHz
2600 MHz
2700 MHz
Temp. = +25°C
-38
Temp. = +25°C
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41
Average Output Power (dBm)
Average Output Power (dBm)
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
Gain vs. Average Output Power
Power Added Efficiency (%)
V
D1,2,3
= +28 V, I
DQ1
= 50 mA, I
DQ3
= 75 mA
1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
Frequency = 2600 MHz
60
55
50
45
40
35
30
25
20
15
10
PAE vs. Average Output Power
V
D1,2,3
= +28 V, I
DQ1
= 50 mA, I
DQ3
= 75 mA
1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
Frequency = 2600 MHz
Gain (dB)
−40°C, V
G2
= −4.3 V
+25°C, V
G2
= −4.4 V
+105°C, V
G2
= −4.5 V
−40°C, V
G2
= −4.3 V
+25°C, VG2 = −4.4 V
+105°C, VG2 = −4.5 V
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41
Average Output Power (dBm)
Average Output Power (dBm)
Test conditions unless otherwise noted: V
D1,2,3
= +28 V, I
DQ1
= 50 mA, I
DQ3
= 75 mA, V
G2
= −4.4 V (typical), T = +25°C, single-carrier,
20 MHz LTE signal with 7.8 dB PAR @ 0.01% CCDF, from EVB measurements at 2600 MHz.
Rev. C
-
5 of 12
-
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