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IS2-1009EH/PROTO

Description
Reference voltageRAD HARD VOLTAGE REFERENCE,PROTOTYPE
Categorysemiconductor    Power management IC    The reference voltage   
File Size154KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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IS2-1009EH/PROTO Overview

Reference voltageRAD HARD VOLTAGE REFERENCE,PROTOTYPE

IS2-1009EH/PROTO Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Product CategoryReference voltage
Shipping restrictionsThis product may require additional documentation for export from the United States.
Installation styleSMD/SMT
Package/boxTO-206AB-3
Reference typeShunt References
Maximum operating temperature+ 125 C
Minimum operating temperature- 55 C
seriesIS-1009
EncapsulationTray
closureNo Shutdown
Factory packaging quantity100
DATASHEET
IS-1009RH, IS-1009EH
Radiation Hardened 2.5V Reference
The Radiation Hardened
IS-1009RH, IS-1009EH
are a 2.5V
shunt regulator diode is designed to provide a stable 2.5V
reference over a wide current range.
These devices are designed to maintain stability over the full
military temperature range and over time. The 0.2% reference
tolerance is achieved by on-chip trimming.
An adjustment terminal is provided to allow for the calibration
of system errors. The use of this terminal to adjust the
reference voltage does not effect the temperature coefficient.
Constructed with the Intersil dielectrically isolated EBHF
process, these devices are immune to single event latch-up
and have been specifically designed to provide highly reliable
performance in harsh radiation environments.
The IS-1009EH replaces the obsoleted IS-1009RH.
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD
5962-00523.
FN4780
Rev 7.00
Nov 19, 2015
Features
• Electrically screened to SMD #5962-00523
• QML qualified per MIL-PRF-38535 requirements
• EH version acceptance tested to 50krad(Si) (LDR)
• Radiation environment
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300 krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . 50krad(Si)
- Latch-up immune. . . . . . . . . . . . . . . . dielectrically isolated
• Reverse breakdown voltage (V
Z
) . . . . . . . . . . . . . . . . . . . . 2.5V
• Change in V
Z
vs current (400µA to 10mA) . . . . . . . . . . . . 6mV
• Change in V
Z
vs temperature (-55°C to +125°C) . . . . .15mV
• Maximum reverse breakdown current . . . . . . . . . . . . . 20mA
• Device is tested with 10µF shunt capacitance connected
from V+ to V-, which provides optimum stability
• Interchangeable with 1009 and 136 industry types
Applications
• Power supply monitoring
• Reference for 5V systems
• A/D and D/A reference
Pin Configurations
IS2-1009RH, IS2-1009EH
(TO-206AB CAN)
BOTTOM VIEW
V+
2
ADJ 1
3 V-
ISYE-1009RH, ISYE-1009EH
(SMD.5)
BOTTOM VIEW
2
V-
3
1
ADJ
V+
FN4780 Rev 7.00
Nov 19, 2015
Page 1 of 4

IS2-1009EH/PROTO Related Products

IS2-1009EH/PROTO ISYE-1009EH-Q
Description Reference voltageRAD HARD VOLTAGE REFERENCE,PROTOTYPE Reference voltageRAD HARD VOLTAGE REFERENCE,CLS V, HDR/LDR
Maker Renesas Electronics Corporation Renesas Electronics Corporation
Maximum operating temperature + 125 C 125 °C
Minimum operating temperature - 55 C -55 °C
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