IS29GL256/128
IS29GL256/128
256/128 Megabit Flash Memory
Page mode Flash Memory, CMOS 3.0 Volt-only
FEATURES
Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
Fast Access Time at -40°C to +125°C:
- 70ns
(1)
at Vcc = 3.0V~3.6V, V
IO
= 3.0V~3.6V
- V
IO
Input/Output 1.65V to 3.6V.
- All input levels (address, control, and DQ input
levels) and outputs are determined by voltage
on V
IO
input.
8-word/16-byte page read buffer
32-word/64-byte write buffer reduces overall
programming time for multiple-word updates
Secured Silicon Region (SSR)
- 512-word/1024-byte sector for permanent,
secure identification
- 256-word Factory Locked SSR and 256-word
Customer Locked SSR
Uniform 64Kword/128KByte Sector
Architecture
Suspend and Resume commands for Program
and Erase operations
Write operation status bits indicate program
and erase operation completion
Support for CFI (Common Flash Interface)
Volatile and non-volatile methods of Advanced
Sector Protection
WP#/ACC input
- Accelerates programming time (when V
HH
is
applied) for greater throughput during system
production
- Protects first or last sector regardless of sector
protection settings
Hardware reset input (RESET#) resets device
Ready/Busy# output (RY/BY#) detects program
or erase cycle completion
Minimum 100K program/erase endurance
cycles.
-
-
-
-
Package Options
56-pin TSOP
64-ball 13mm x 11mm BGA
64-ball 9mm x 9mm BGA
56-ball 9mm x 7mm BGA (Call Factory)
Temperature Range
- Extended Grade: -40°C to +105°C
- Automotive Grade: -40°C to +125°C
Note:
1. 80ns at Vcc=2.7V~3.6V, V
IO
=2.7V~3.6V.
90ns at Vcc=2.7V~3.6V, V
IO
=1.65V ~ Vcc.
GENERAL DESCRIPTION
The IS29GL256/128 offer a fast page access time of 20ns with a corresponding random access time as
fast as 70ns. It features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed
in one operation, resulting in faster effective programming time than standard programming algorithms.
This makes the device ideal for today’s embedded applications that require higher density, better
performance and lower power consumption.
Integrated Silicon Solution, Inc. - www.issi.com
Rev. A2
11/08/2018
2
RF/Wirelessly
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