TGA2214-CP
2 – 18 GHz 4 W GaN Power Amplifier
Product Description
Qorvo’s TGA2214-CP is a packaged wideband power
amplifier fabricated on Qorvo’s QGaN15 0.15 µm GaN on
SiC process. Operating from 2 to 18 GHz, the TGA2214-
CP generates > 4 W saturated output power with a power-
added efficiency of > 15 %, and > 14 dB large signal gain
across the entire operational band.
The TGA2214-CP is offered in a 10-lead 15 x 15 mm bolt-
down package. The package has a pure Cu base, offering
superior thermal management. The TGA2214-CP is ideally
suited to support, both in the commercial and the defense
arenas, applications requiring either wideband or multi-
band frequency performance.
Both RF ports have integrated DC blocking capacitors and
are fully matched to 50 Ohms.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Product Features
•
•
•
•
•
•
•
•
Frequency Range: 2 – 18 GHz
P
OUT
: > 36 dBm at P
IN
= 23 dBm
PAE: > 15 % CW at P
IN
= 23 dBm
Small Signal Gain: > 22 dB
IM3: < −17 dBc at 30 dBm P
OUT
/ Tone
Bias: V
D
= +22 V, I
DQ
= 600 mA, V
G
= −2.3 V Typical
Package Dimensions: 15.2 x 15.2 x 3.5 mm
Package base is pure Cu offering superior thermal
management
Functional Block Diagram
Applications
1
2
3
4
5
10
9
8
7
6
•
Test Equipment
•
Electronic Warfare
•
Military and Commercial Radar
Ordering Information
Part No.
TGA2214-CP
ECCN
3A001.b.2.c
Description
2 – 18 GHz 4 W GaN Power
Amplifier
Data Sheet Rev. D, May 10, 2018
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TGA2214-CP
2 – 18 GHz 4 W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Drain Voltage (V
D
)
Gate Voltage Range (V
G
)
Drain Current (I
D
)
1
st
stage
2
nd
stage
Forward Gate Current (I
G
)
Power Dissipation (P
DISS
), 85 °
C
Input Power, CW, 50 , (P
IN
)
Input Power, CW, VSWR 3:1,
V
D
= +30 V, 85 ° (P
IN
)
C,
Channel Temperature (T
CH
)
Mounting Temperature
(30 Seconds)
Storage Temperature
Value / Range
+29.5 V
−5 to 0 V
0.5 A
1.0 A
See graph this page
31 W
31 dBm
31 dBm
275 °
C
260 °
C
−55 to 150 °C
Recommended Operating
Conditions
Parameter
Drain Voltage (V
D
)
Drain Current (I
DQ
)
Drain Current Under RF Drive
(I
D_DRIVE
)
Gate Voltage (V
G
)
Gate Current Under RF Drive
(I
G_DRIVE
)
Temperature (T
BASE
)
Value / Range
+22 V
600 mA
See plots p. 7
−2.3 V (Typ.)
See plots p. 7
−40 to 85 °
C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Operation of this device outside the parameter ranges given above
may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied.
Electrical Specifications
Parameter
Operational Frequency Range
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power at P
IN
= 23 dBm
Power Added Efficiency at P
IN
= 23 dBm
IM3 ( P
OUT
/ Tone
= 30 dBm/Tone)
IM5 ( P
OUT
/ Tone
= 30 dBm/Tone)
Small Signal Gain Temperature Coefficient
Output Power Temperature Coefficient (25 to
85 °
C)
Recommended Operating Voltage
Min
2
–
–
–
–
–
–
–
–
–
–
Typ
–
> 22
>8
> 11
> 36
> 15
< −17
< −29
-0.04
−0.005
+22
Max
18
–
–
–
–
–
–
–
–
–
+22
Units
GHz
dB
dB
dB
dBm
%
dBc
dBc
dB/°C
dBm/°
C
V
Test conditions unless otherwise noted: 25 ° V
D
= +22 V,
I
DQ
= 600 mA, V
G
= −2.3 V Typ, CW.
C,
Data Sheet Rev. D, May 10, 2018
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TGA2214-CP
2 – 18 GHz 4 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Thermal Resistance (θ
JC
)
(1)
Channel Temperature (T
CH
) (Under RF drive)
Median Lifetime (T
M
)
Notes:
1.
Thermal resistance measured to back of package.
Test Conditions
T
BASE
= 85 °C, V
D
= +22 V (CW)
At Freq = 10 GHz, P
IN
= 23 dBm:
I
DQ
= 600 mA, I
D_Drive
= 1.3 A
P
OUT
= 37 dBm, P
DISS
= 23.6 W
Value
6.2
232
4.4E+6
Units
°
C/W
°
C
Hrs
Median Lifetime
Test Conditions: V
D
= +28 V; Failure Criteria = 10 % reduction in ID_MAX
28
26
Dissipated Power vs. Frequency vs. Temp.
P
DISS
(W)
24
22
20
18
16
14
P
in
= 23 dBm, CW
-40 °
C
25 °C
85 °C
12
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Data Sheet Rev. D, May 10, 2018
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TGA2214-CP
2 – 18 GHz 4 W GaN Power Amplifier
Performance Plots – Small Signal
Conditions unless otherwise specified: V
D
= +22 V, I
DQ
= 600 mA, V
G
= −2.3 V Typical, CW.
Gain vs. Frequency vs. Temperature
Gain vs. Frequency vs. Drain Current
32
30
28
30
28
26
S21 (dB)
26
24
22
20
18
1
3
5
7
9
11
13
15
17
19
-40 °
C
25 °
C
85 °
C
S21 (dB)
24
22
20
18
1
3
5
450 mA
600 mA
7
9
11
13
15
17
19
Frequency (GHz)
Frequency (GHz)
Gain vs. Frequency vs. Temperature
30
0
-5
Return Loss vs. Frequency vs. Temp.
10
S22
S11
-40 °
C
S11 & S22 (dB)
11
16
21
26
31
25 °
C
-10
-15
-20
-25
-30
S21 (dB)
-10
85 °
C
-30
-50
-70
1
6
1
3
5
7
9
11 13 15 17 19 21 23 25 27 29 31
Frequency (GHz)
Frequency (GHz)
0
-5
-10
-15
-20
-25
-30
1
Input Return Loss vs. Frequency vs. Temp.
0
-5
-10
Output Return Loss vs. Frequency vs. Temp.
-40 °
C
25 °
C
85 °
C
S22 (dB)
13
15
17
19
S11 (dB)
-15
-20
-25
-30
-40 °
C
25 °
C
85 °
C
3
5
7
9
11
1
3
5
7
9
11
13
15
17
19
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. D, May 10, 2018
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www.qorvo.com
TGA2214-CP
2 – 18 GHz 4 W GaN Power Amplifier
Performance Plots – Large Signal
Conditions unless otherwise specified: V
D
= +22 V, I
DQ
= 600 mA, V
G
= −2.3 V Typical, CW.
40
39
Output Power vs. Input Power vs. Temp.
Frequency = 10 GHz
40
39
Output Power vs. Input Power vs. Freq.
Temp = 25 °
C
Output Power (dBm)
37
36
35
34
33
32
18
20
22
24
26
28
-40 °
C
25 °
C
85 °
C
Output Power (dBm)
38
38
37
36
2 GHz
35
34
33
32
18
20
6 GHz
10 GHz
14GHz
18GHz
22
24
26
28
Input Power (dBm)
Input Power (dBm)
40
Output Power vs. Frequency vs. Temp.
40
Output Power vs. Freq. vs. Drain Current
39
39
Output Power (dBm)
38
Output Power (dBm)
38
37
-40 °
C
25 °
C
P
in
= 23 dBm
85 °
C
37
450 mA
600 mA
P
in
= 23 dBm
36
36
35
2
4
6
8
10
12
14
16
18
35
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Frequency (GHz)
40
Output Power vs. Frequency vs. P
IN
39
Output Power (dBm)
38
37
P
IN
= 20 dBm
P
IN
= 23 dBm
Temp = 25 °
C
P
IN
= 26 dBm
36
35
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Data Sheet Rev. D, May 10, 2018
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