QPA4563A
®
DC – 3500 MHz Cascadable SiGe HBT Amplifier
Product Overview
The QPA4563A is a high performance SiGe HBT MMIC
amplifier. A Darlington configuration provides high FT and
excellent thermal performance. The heterojunction
increases breakdown voltage and minimizes leakage
current between junctions. Cancellation of emitter junction
non-linearities results in higher suppression of
intermodulation products.
The QPA4563A may be operated from a variety of supply
voltages by using a voltage dropping resistor. Two DC-
blocking capacitors, bypass capacitors and an optional RF
choke complete the circuit required for operation of this
internally matched 50 ohm device.
The QPA4563A is assembled in an industry standard
SOT-363 package that is lead-free and RoHS-compliant.
6 Lead SOT-363 Package
Key Features
DC to 3500 MHz Operation
Single Positive Voltage Supply
Gain: 20.4 dB at 1950 MHz
Output IP3: +29.4 dBm typical at 1950 MHz
Noise Figure: 2.5 dB Typical at 1950 MHz
Robust 1000 V Class 1C HBM ESD Rating
Lead-free/RoHS-compliant SOT-363 Package
Functional Block Diagram
Applications
Cellular, PCS, GSM, UMTS
PA Driver Amplifier
IF/RF Buffer Amplifier
Wireless Data, Satellite
Top View
Ordering Information
Part No.
QPA4563ASQ
QPA4563ASR
QPA4563ATR7
Description
25 Piece Sample Bag
100 Pieces on 7” Reel
3000 pieces on a 7” reel
QPA4563APCK401 850 MHz, EVB with 5 Piece Sample Bag
Data Sheet Sept. 26, 2016 | Subject to change without notice
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QPA4563A
®
DC – 3500 MHz Cascadable SiGe HBT Amplifier
Absolute Maximum Ratings
Parameter
Storage Temp
Device Voltage (V
D
)
Device Current (I
D
)
RF Input Power (Z
L
= 50 Ω)
Recommended Operating Conditions
Rating
−55 to +150 °C
+5 V
90 mA
+18 dBm
Parameter
Operating Temperature
Junction Temperature (T
J
)
Min
−40
Typ
Max
+105
+125
Units
°C
°C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Bias Conditions should also satisfy the following expression:
I
D
x V
D
< (T
JUNCTION
-T
LEAD
) / R
TH
Electrical Specifications
Parameter
Small Signal Gain
Conditions
850 MHz
1950 MHz
2400 MHz
850 MHz
Min
Typ
23.5
20.4
19.2
+16.0
+16.2
+15.8
+30.0
+29.4
+28.9
28.7
17.1
16.9
25.0
14.9
14.2
25.8
24.1
23.5
2.3
2.5
2.8
+3.5
45
124
Max
Units
dB
Output Power at 1dB Compression
1950 MHz
2400 MHz
850 MHz
dBm
Output Third Intercept Point
1950 MHz
2400 MHz
850 MHz
dBm
Input Return Loss, |S11|
1950 MHz
2400 MHz
850 MHz
dB
Output Return Loss, |S22|
1950 MHz
2400 MHz
850 MHz
dB
Reverse Isolation, |S12|
1950 MHz
2400 MHz
850 MHz
dB
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance
1950 MHz
2400 MHz
dB
V
mA
°C/W
Notes:
1. Test conditions unless otherwise noted: V
S
= +8 V, R
BIAS
= 100 Ω, V
D
= +3.5 V, I
D
=45 mA Typ., OIP3 Tone Spacing = 1 MHz, P
OUT
/tone = −10 dBm,
T
LEAD
= +25°C, Z
S
= Z
L
=50 Ω
Data Sheet Sept. 26, 2016 | Subject to change without notice
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QPA4563A
®
DC – 3500 MHz Cascadable SiGe HBT Amplifier
Performance Plots – 850 MHz Application Circuit
Test conditions unless otherwise noted:
V
S
= +8 V, R
BIAS
= 100 Ω, I
D
=45 mA Typ
Data Sheet Sept. 26, 2016 | Subject to change without notice
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QPA4563A
®
DC – 3500 MHz Cascadable SiGe HBT Amplifier
Evaluation Board and Schematic – 850 MHz Application Circuit
Bill of Material – 850 MHz Application Circuit
Reference
n/a
U1
C1
C2
C3
C4, C5
R1
L1
J1, J2
P1
Value
n/a
n/a
1 uF
1000 pF
68 pF
100 pF
100 Ω
33 nH
n/a
n/a
Description
PCB
HBT MMIC Amplifier
CAP, 10%, 25V, X7R, 1206
CAP, 10%, 50V, X7R, 0402
CAP, 5%, 50V, C0G, 0402
CAP, 5%, 50V, C0G, 0402
RES, 5%, 1/2W, 1210
IND, 5%, M/L, 0603
CONN, SMA, EL, FLT, 0.068" SPE-000318
CONN, HDR, ST, 1x2, 0.100", Hi-temp, T/H
Manufacturer
Qorvo
Qorvo
Murata Electronics
Murata Electronics
Murata Electronics
Murata Electronics
Panasonic Industrial Devices
Murata Electronics
Amphenol RF Asia Corp
Samtec Inc
Part Number
QPAXX63X-410(A)
QPA4563A
GRM31MR71E105KA01L
GRM155R71H102KA01D
GRM1555C1H680JA01D
GRM1555C1H101JA01D
ERJ-14YJ101U
LL1608-FSL33NJ
901-10426
HTSW-102-07-G-S
Component Values for Specific Frequencies
Reference Designator
C4, C5
C3
L1
500 MHz
220 pF
100 pF
68 nH
850 MHz
100 pF
68 pF
33 nH
1950 MHz
68 pF
22 pF
22 nH
2400 MHz
56 pF
22 pF
18 nH
3500 MHz
39 pF
15 pF
15 nH
Bias Resistor Values for Specific Supply Voltages
Reference Designator
R1 ( Rbias)
(1,2)
V
S
=+6 V
51 Ω
V
S
=+8 V
100 Ω
V
S
=+10 V
150 Ω
V
S
=+12 V
180 Ω
Notes:
1. Bias resistor improves current stability over temperature
2. Bias Resistance = R
BIAS
+ R
LDC
= ( V
S
-V
D
) / I
D
Data Sheet Sept. 26, 2016 | Subject to change without notice
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QPA4563A
®
DC – 3500 MHz Cascadable SiGe HBT Amplifier
Pin Configuration and Description
Top View
Pad No.
1, 2, 4, 5
3
6
Label
GND
RF
IN
RF
OUT
/Bias
Description
Connection to ground. Use via holes in PCB for best performance to reduce lead inductance as close to
ground leads as possible
RF Input Pin. DC voltage is present on this pin therefore this pin requires the use of an external DC
blocking capacitor chosen for the frequency of operation.
RF Output and Bias Pin. DC voltage is present on this pin therefore this pin requires the use of an
external DC blocking capacitor chosen for the frequency of operation.
Package Marking
XXXX is an Alpha-numeric trace code.
Data Sheet Sept. 26, 2016 | Subject to change without notice
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