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1N5393 R0

Description
Rectifier 1.5A, 200V, SILASTIC, RECTIFIER
Categorysemiconductor    Discrete semiconductor    Diode rectifier with    rectifier   
File Size306KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

1N5393 R0 Overview

Rectifier 1.5A, 200V, SILASTIC, RECTIFIER

1N5393 R0 Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Product CategoryRectifier
Installation styleThrough Hole
Package/boxDO-15-2
Vr - 反向电压 200 V
If - forward current1.5 A
typeStandard Recovery Rectifiers
ConfigurationSingle
Vf - forward voltage1 V
Maximum surge current50 A
Ir - 反向电流 5 uA
Minimum operating temperature- 65 C
Maximum operating temperature+ 150 C
series1N539x
EncapsulationReel
high3.6 mm
length7.6 mm
productRectifiers
width3.6 mm
unit weight350 mg
1N5391 thru 1N5399
Taiwan Semiconductor
CREAT BY ART
FEATURES
- High efficiency, Low VF
- High current capability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Silicon Rectifiers
MECHANICAL DATA
Case:
DO-204AC (DO-15)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
0.4g (approximately)
DO-204AC (DO-15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
ed
1N
1N
1N
100
70
100
200
200
400
280
400
1.5
50
1.0
5
50
50
5
12
60
- 55 to +150
- 55 to +150
140
nd
50
35
50
1.1
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 1.5 A
Maximum reverse current @ rated VR
Typical junction capacitance (Note 2)
Typical thermal resistance
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
1N
1N
1N
800
560
800
1N
1000
700
1000
5391 5392 5393 5395 5397 5398 5399
600
420
600
UNIT
V
V
V
A
A
V
μA
pF
O
tR
T
J
=25
T
J
=125
eco
Cj
R
θJC
R
θJL
R
θJA
T
J
T
STG
mm
e
No
C/W
O
O
Operating junction temperature range
Storage temperature range
C
C
Note 1: Pulse test with PW=300
μs,
1% duty cycle
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1406009
Version: D14

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