SLG59M1657V
An Ultra-small 3 mm
2
, 8.4 mΩ, 4 A, 125°C-Rated
Internally-protected Integrated Power Switch
General Description
The SLG59M1657V is a high performance 8.4 mΩ, 4 A
single-channel nFET integrated power switch which can
operate with a 2.5 V to 5.5 V V
DD
supply to switch power rails
from as low as 0.9 V up to the supply voltage. The
SLG59M1657V incorporates two-level overload current
protection, thermal shutdown protection, and in-rush current
control which can easily be adjusted by a small external
capacitor.
Using a proprietary MOSFET design, the SLG59M1657V
achieves a stable 8.4 mΩ RDS
ON
across a wide input voltage
range. In addition, the SLG59M1657V’s package also exhibits
low thermal resistance for high-current operation using
Silego’s proprietary CuFET technology.
Fully specified over the -40 °C to 125 °C temperature range,
the SLG59M1657V is packaged in a space-efficient, low
thermal resistance, RoHS-compliant 1.5 mm x 2.0 mm STDFN
package.
Pin Configuration
VDD
ON
D
D
1
2
3
4
8
7
6
5
GND
CAP
S
S
8-pin FC-TDFN
(Top View)
Applications
• Notebook Power Rail Switching
• Tablet Power Rail Switching
• Smartphone Power Rail Switching
SLG59M1657V
Features
• 1.5 x 2.0 mm FC-TDFN 8L package (2 fused pins for drain
and 2 fused pins for source)
• Logic level ON pin capable of supporting 0.9 V CMOS
Logic
• User selectable ramp rate with external capacitor
• 8.4 mΩ RDS
ON
while supporting 4 A
• Two Over Current Protection Modes
• Short Circuit Current Limit
• Active Current Limit
• Over Temperature Protection
• Pb-Free / Halogen-Free / RoHS compliant
• Operating Temperature: -40
°C
to 125°C
• Operating Voltage: 2.5 V to 5.5 V
Block Diagram
4 A @ 8.4 mΩ
D
C
IN
VDD
+2.5 V to 5.5 V
S
C
LOAD
Charge
Pump
Linear Ramp
Control
CAP
C
SLEW
4 nF
Over Current and
Over Temperature
Protection
ON
CMOS Input
0.85 to 3.6 V
GND
Silego Technology, Inc.
000-0059M1657-100
Rev 1.00
Revised February 23, 2017
SLG59M1657V
Pin Description
Pin #
1
Pin Name
VDD
Type
PWR
Pin Description
With an internal 1.8 V UVLO threshold, VDD supplies the power for the
operation of the power switch and internal control circuitry. Bypass the VDD
pin to GND with a 0.1 µF (or larger) capacitor.
A low-to-high transition on this pin initiates the operation of the
SLG59M1657V’s state machine. ON is a CMOS input with V
IL
< 0.25 V
and V
IH
> 0.85 V thresholds. While there is an internal pull-down circuit to
GND (~4 MΩ), connect this pin directly to a general-purpose output (GPO)
of a microcontroller, an application processor, or a system controller. Do
not allow this pin to be open-circuited.
Drain terminal connection of the n-channel MOSFET (2 pins fused for V
D
).
Connect at least a low-ESR 0.1 µF capacitor from this pin to ground.
Capacitors used at V
D
should be rated at 10 V or higher.
Source terminal connection of the n-channel MOSFET (2 pins fused for
V
S
). Connect a low-ESR capacitor from this pin to ground and consult the
Electrical Characteristics table for recommended C
LOAD
range. Capacitors
used at V
S
should be rated at 10 V or higher.
A low-ESR, stable dielectric, ceramic surface-mount capacitor connected
from CAP pin to GND sets the V
S
slew rate and overall turn-on time of the
SLG59M1657V. For best performance C
SLEW
value should be
≥
1.5 nF
and voltage level should be rated at 10 V or higher.
Ground connection. Connect this pin to system analog or power ground
plane.
2
ON
Input
3, 4
D
MOSFET
5, 6
S
MOSFET
7
CAP
Input
8
GND
GND
Ordering Information
Part Number
SLG59M1657V
SLG59M1657VTR
Type
FC-TDFN 8L
FC-TDFN 8L (Tape and Reel)
Production Flow
Extended Industrial, -40
°C
to 125
°C
Extended Industrial, -40
°C
to 125
°C
000-0059M1657-100
Page 2 of 13
SLG59M1657V
Absolute Maximum Ratings
Parameter
V
DD
V
D
to GND
V
S
to GND
Description
Power Supply
Power Switch Input Voltage to GND
Power Switch Output Voltage to GND
Conditions
Min.
--
-0.3
-0.3
-0.3
-40
-65
-40
Human Body Model
Charged Device Model
1.5 x 2 mm, 8L TDFN; Determined using
1 in
2
, 1 oz. copper pads under each VD
and VS terminals and FR4 pcb material
2000
1000
Typ.
--
--
--
--
--
--
--
--
--
1
--
--
--
For no more than 1 ms with 1% duty cy-
cle
--
69
--
--
--
--
1
4
4.5
°C/W
W
A
A
Max.
7
7
V
D
7
125
150
125
--
--
Unit
V
V
V
V
°C
°C
°C
V
V
ON and CAP to
ON and CAP Pin Voltages to GND
GND
T
O
T
S
T
A
ESD
HBM
ESD
CDM
MSL
θ
JA
W
DIS
Operating Temperature
Storage Temperature
Rated Operating Temperature
ESD Protection
ESD Protection
Moisture Sensitivity Level
Thermal Resistance
Package Power Dissipation
MOSFET IDS Max Continuous Switch Current
MOSFET IDS
PK
Peak Current from Drain to Source
Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Electrical Characteristics
T
A
= -40 to 125 °C (unless otherwise stated)
Parameter
V
DD
V
DD_UVLO
Description
Power Supply Voltage
V
DD
Undervoltage Lockout
Threshold
Conditions
-40 to 125°C
V
DD
↑
when OFF; T
A
= 70 °C;
V
S
= 0 V; V
D
= V
DD
= 5.5 V
I
DD
Power Supply Current
when OFF; T
A
= 85 °C;
V
S
= 0 V; V
D
= V
DD
= 5.5 V
when OFF; T
A
= 125 °C;
V
S
= 0 V; V
D
= V
DD
= 5.5 V
when ON, no Load
T
A
25°C @ 100 mA
RDS
ON
V
D
ON Resistance
Drain Voltage
T
A
85°C @ 100 mA
T
A
125°C @ 100 mA
Min.
2.5
--
--
--
--
--
--
--
--
0.9
Typ.
--
1.8
--
--
--
70
8.4
10
12
--
Max.
5.5
--
1
1
1.5
120
10
12
14.4
Unit
V
V
μA
μA
μA
μA
mΩ
mΩ
mΩ
V
V
DD
000-0059M1657-100
Page 3 of 13
SLG59M1657V
Electrical Characteristics
(continued)
T
A
= -40 to 125 °C (unless otherwise stated)
Parameter
Description
Conditions
V
D
= V
DD
= 5.5 V;
V
S
= 0 V; ON = 0 V; T
A
= 70°C
I
FET_OFF
MOSFET OFF Leakage Current
V
D
= V
DD
= 5.5 V;
V
S
= 0 V; ON = 0 V; T
A
= 85°C
V
D
= V
DD
= 5.5 V;
V
S
= 0 V; ON = 0 V; T
A
= 125°C
V
S(SR)
T
ON_Delay
T
OFF_Delay
T
FALL
C
LOAD
ON_V
IH
ON_V
IL
I
LIMIT
Short Circuit Current Limit (I
SCL
)
THERM
ON
Thermal shutoff turn-on temperature
Slew Rate
ON pin Delay Time
OFF Delay Time
V
S
Fall Time
Output Capacitive Load to GND
High Input Voltage on ON pin
Low Input Voltage on ON pin
Active Current Limit (I
ACL
)
MOSFET will automatically limit cur-
rent when VS > 250 mV
MOSFET will automatically limit cur-
rent when VS < 250 mV
C
SLEW
= 4 nF, V
DD
= V
D
= 5 V,
C
LOAD
= 10
μF,
R
LOAD
= 20
Ω
50% ON to Ramp Begin
50% ON to V
S
Fall Start,
V
DD
= V
D
= 5 V, no C
LOAD
,
R
LOAD
= 20
Ω
90% V
S
to 10% V
S
, V
DD
= V
D
= 5 V,
no C
LOAD
, R
LOAD
= 20
Ω
Min.
--
--
--
--
--
--
--
--
0.85
Typ.
--
--
--
3
200
22
10
--
--
0
6.0
0.5
150
130
--
Max.
1
1
20
Unit
μA
μA
μA
V/ms
μs
μs
μs
μF
V
V
A
A
°C
°C
ms
--
--
--
--
500
V
DD
0.25
-0.3
--
--
--
--
--
--
--
--
--
1
THERM
OFF
Thermal shutoff turn-off temperature
THERM
TIME
Thermal shutoff time
T
Total_ON
, T
ON_Delay
and Slew Rate Measurement
ON
50% ON
50% ON
T
OFF_Delay
90% V
S
V
S
T
ON_Delay
10% V
S
V
S(SR)
(V/ms)
T
Total_ON
Note: Rise and Fall times of the ON signal are 100 ns
000-0059M1657-100
Page 4 of 13
90% V
S
10% V
S
T
FALL
SLG59M1657V
Typical Performance Characteristics
RDS
ON
vs. V
DD
, and Temperature
RDS
ON
vs. V
D
and V
DD
000-0059M1657-100
Page 5 of 13
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