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S29GL256S10DHB023

Description
NOR FlashNor
Categorysemiconductor    Memory IC    NOR flash memory   
File Size2MB,109 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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S29GL256S10DHB023 Overview

NOR FlashNor

S29GL256S10DHB023 Parametric

Parameter NameAttribute value
MakerCypress Semiconductor
Product CategoryNOR flash memory
Installation styleSMD/SMT
Package/boxFBGA-64
seriesS29GL01G/512/256/128S
storage256 Mbit
Interface TypeParallel
Timing typeAsynchronous
Data bus width16 bit
Supply voltage - min.2.7 V
Supply voltage - max.3.6 V
Supply current—max.100 mA
Minimum operating temperature- 40 C
Maximum operating temperature+ 105 C
EncapsulationCut Tape
EncapsulationReel
storage typeNOR
speed100 ns
structureMirrorBit Eclipse
standardCommon Flash Interface (CFI)
Factory packaging quantity2200
S29GL01GS/S29GL512S
S29GL256S/S29GL128S
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/
256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),
3.0 V, GL-S Flash Memory
General Description
The Cypress
®
S29GL01G/512/256/128S are MirrorBit
®
Eclipse flash products fabricated on 65 nm process technology. These
devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a
Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective
programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that
require higher density, better performance and lower power consumption.
Distinctive Characteristics
CMOS 3.0 Volt Core with Versatile I/O
65 nm MirrorBit Eclipse Technology
Single supply (V
CC
) for read / program / erase (2.7 V to
3.6 V)
Versatile I/O Feature
– Wide I/O voltage range (V
IO
): 1.65 V to V
CC
×16 data bus
Asynchronous 32-byte Page read
512-byte Programming Buffer
– Programming in Page multiples, up to a maximum of
512 bytes
Single word and multiple program on same word options
Automatic Error Checking and Correction (ECC) – internal
hardware ECC with single bit error correction
Sector Erase
– Uniform 128-kbyte sectors
Suspend and Resume commands for Program and Erase
operations
Status Register, Data Polling, and Ready/Busy pin methods
to determine device status
Advanced Sector Protection (ASP)
– Volatile and non-volatile protection methods for each
sector
Separate 1024-byte One Time Program (OTP) array with two
lockable regions
Common Flash Interface (CFI) parameter table
Temperature Range / Grade
– Industrial (-40 °C to +85 °C)
– Industrial Plus(-40 °C to +105 °C)
– Automotive, AEC-Q100 Grade 3 (-40 °C to +85 °C)
– Automotive, AEC-Q100 Grade 2 (-40 °C to +105 °C)
100,000 Program / Erase Cycles
20 Years Data Retention
Packaging Options
– 56-pin TSOP
– 64-ball LAA Fortified BGA, 13 mm × 11 mm
– 64-ball LAE Fortified BGA, 9 mm × 9 mm
– 56-ball VBU Fortified BGA, 9 mm × 7 mm
Cypress Semiconductor Corporation
Document Number: 001-98285 Rev. *R
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised June 21, 2018
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