1N5399 datasheet, PDF - EEWORLD Datasheet

1N5399: Description1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15; Categorysemiconductor Discrete semiconductor; File Size699KB，1 Pages; ManufacturerFUJI; Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/

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1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
state	ACTIVE
packaging shape	ROUND
Package Size	LONG FORM
Terminal form	WIRE
terminal coating	TIN LEAD
Terminal location	AXIAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Shell connection	ISOLATED
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
application	GENERAL PURPOSE
Phase	1
Maximum reverse recovery time	2 us
Maximum repetitive peak reverse voltage	1000 V
Maximum average forward current	1.5 A
Maximum non-repetitive peak forward current	50 A

	1N5399	1N5391	1N5392	1N5393	1N5394	1N5395	1N5396	1N5397	1N5398
Description	1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15	1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-15	1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-41	RECTIFIER DIODE, DO-15	1.5 A, 300 V, SILICON, RECTIFIER DIODE, DO-15	1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15	1.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-204AL	1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-41	1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AL

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