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1N5402

Description
3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size126KB,2 Pages
ManufacturerSEMTECH
Websitehttp://www.semtech.com
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1N5402 Overview

3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5402 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin lead
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage200 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current200 A

1N5402 Related Products

1N5402 1N5400 1N5401 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408
Description 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE,1KV V(RRM),DO-204AE
Number of terminals 2 2 2 - 2 - 2 - -
Number of components 1 1 1 - 1 - 1 - -
Processing package description PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 - GREEN, PLASTIC PACKAGE-2 - LEAD FREE, PLASTIC, CASE 267-05, 2 PIN - -
state DISCONTINUED ACTIVE ACTIVE - ACTIVE - DISCONTINUED - CONSULT MFR
packaging shape round round round - round - round - -
Package Size LONG FORM LONG FORM LONG FORM - LONG FORM - LONG FORM - -
Terminal form Wire Wire Wire - Wire - Wire - -
terminal coating tin lead MATTE Tin tin - PURE Tin - MATTE Tin - -
Terminal location AXIAL AXIAL AXIAL - AXIAL - AXIAL - -
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy - Plastic/Epoxy - -
structure single single single - single - single - -
Shell connection isolation isolation isolation - isolation - isolation - -
Diode component materials silicon silicon silicon - silicon - silicon - -
Diode type rectifier diode rectifier diode rectifier diode - rectifier diode - rectifier diode - rectifier diode
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE - EFFICIENCY - GENERAL PURPOSE - -
Phase 1 1 1 - 1 - 1 - -
Maximum repetitive peak reverse voltage 200 V 50 V 100 V - 400 V - 600 V - -
Maximum average forward current 3 A 3 A 3 A - 3 A - 3 A - -
Maximum non-repetitive peak forward current 200 A 200 A 200 A - 200 A - 200 A - -
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