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1N5402GP

Description
3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size75KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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1N5402GP Overview

3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD

MCC
Features
  omponents
21201 Itasca Street Chatsworth

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1N5400GP
THRU
1N5408GP
3 Amp Glass
Passivated Rectifier
50 - 1000 Volts
DO-201AD
Low Current Leakage
Metalurgically Bonded Construction
Low Forward Voltage
High Current Capability
Glass Passivated Junction
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 30
°C/W
Junction To Lead
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
D
1N5400GP
1N5401GP
1N5402GP
1N5404GP
1N5406GP
1N5407GP
1N5408GP
---
---
---
---
---
---
---
35V
70V
140V
280V
420V
560V
700V
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
3.0A
T
A
= 105°C
Current
Peak Forward Surge
I
FSM
200A
8.3ms, half sine
Current
Maximum
1.1V
I
FM
= 3.0A;
Instantaneous
V
F
Forward Voltage
T
J
= 25°C*
Maximum DC
Reverse Current At
I
R
5.0µA
T
J
= 25°C
Rated DC Blocking
50µA
T
J
= 125°C
Voltage
Typical Junction
C
J
40pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 300
µsec,
Duty cycle 1%
C
DIMENSIONS
INCHES
MIN
---
---
.048
1.000
MM
MIN
---
---
1.20
25.40
DIM
A
B
C
D
MAX
.370
.250
.052
---
MAX
9.50
6.40
1.30
---
NOTE
www.mccsemi.com

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Description 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
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