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2N4957UB/TR

Description
Bipolar Transistor - Bipolar Junction Transistor (BJT)
Categorysemiconductor    Discrete semiconductor    The transistor    Bipolar transistor - a bipolar junction transistor (BJT)   
File Size215KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

2N4957UB/TR Overview

Bipolar Transistor - Bipolar Junction Transistor (BJT)

2N4957UB/TR Parametric

Parameter NameAttribute value
MakerMicrosemi
Product CategoryBipolar Transistor - Bipolar Junction Transistor (BJT)
RoHSN
technologySi
Installation styleSMD/SMT
Package/boxLCC-3
Transistor polarityPNP
ConfigurationSingle
Collector-emitter maximum voltage VCEO- 30 V
Collector-base voltage VCBO- 30 V
Emitter-Base voltage VEBO- 3 V
Maximum DC collector current- 30 mA
Minimum operating temperature- 65 C
Maximum operating temperature+ 200 C
DC current gain hFE maximum165 at - 5 mA, 10 V
EncapsulationReel
DC collector/Base Gain hfe Min10 at - 5 mA, 10 V
Pd-power dissipation200 mW
Factory packaging quantity100
2N4957UB
Surface Mount PNP Silicon
VHF-UHF Amplifier Transistors
Qualified per MIL-PRF-19500/426
DESCRIPTION
The 2N4957UB is a military qualified silicon PNP amplifier transistor designed for VHF-UHF
equipment and other high-reliability applications. Common applications include high gain low
noise amplifier; oscillator, and mixer applications. It is also available in a low-profile TO-72
leaded package.
Compliant
Qualified Levels:
JAN, JANTX,
and JANTXV
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 2N4957
JAN, JANTX, and JANTXV military qualified versions are available per MIL-PRF-19500/426
(See
part nomenclature
for all available options)
RoHS compliant
UB Package
Also available in:
TO-72 Package
(leaded top hat)
2N4957
APPLICATIONS / BENEFITS
Low-power, ultra-high frequency transistor
Leaded metal TO-72 package
MAXIMUM RATINGS
@
T
A
= +25
o
C
Parameters/Test Conditions
Junction and Storage Temperature
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
(1)
Total Power Dissipation
Collector Current
Notes:
1. Derate linearly 1.14 mW/°C for T
A
> +25 °C
Symbol
T
J
and T
STG
V
CEO
V
CBO
V
EBO
P
T
I
C
Value
-65 to +200
-30
-30
-3
200
-30
Unit
C
V
V
V
mW
mA
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0313-1, Rev. 1 (10/8/13)
©2013 Microsemi Corporation
Page 1 of 4

2N4957UB/TR Related Products

2N4957UB/TR JANTX2N4957UB/TR
Description Bipolar Transistor - Bipolar Junction Transistor (BJT) Bipolar Transistor - Bipolar Junction Transistor (BJT)
Maker Microsemi Microsemi
Product Category Bipolar Transistor - Bipolar Junction Transistor (BJT) Bipolar Transistor - Bipolar Junction Transistor (BJT)
RoHS N N
technology Si Si
Installation style SMD/SMT SMD/SMT
Package/box LCC-3 LCC-3
Transistor polarity PNP PNP
Configuration Single Single
Collector-emitter maximum voltage VCEO - 30 V - 30 V
Collector-base voltage VCBO - 30 V - 30 V
Emitter-Base voltage VEBO - 3 V - 3 V
Maximum DC collector current - 30 mA - 30 mA
Minimum operating temperature - 65 C - 65 C
Maximum operating temperature + 200 C + 200 C
DC current gain hFE maximum 165 at - 5 mA, 10 V 165 at - 5 mA, 10 V
DC collector/Base Gain hfe Min 10 at - 5 mA, 10 V 10 at - 5 mA, 10 V
Pd-power dissipation 200 mW 200 mW
Factory packaging quantity 100 1
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