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MT46H64M32LFBQ-48 IT:C TR

Description
Dynamic Random Access Memory MOBILE DDR 2G 64MX32 FBGA
Categorysemiconductor    Memory IC    Dynamic random access memory   
File Size6MB,99 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance
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MT46H64M32LFBQ-48 IT:C TR Overview

Dynamic Random Access Memory MOBILE DDR 2G 64MX32 FBGA

MT46H64M32LFBQ-48 IT:C TR Parametric

Parameter NameAttribute value
MakerMicron
Product Categorydynamic random access memory
typeSDRAM Mobile - LPDDR1
Data bus width32 bit
organize64 M x 32
Package/boxVFBGA-90
storage2 Gbit
maximum clock frequency208 MHz
interview time4.8 ns
Supply voltage - max.1.95 V
Supply voltage - min.1.7 V
Supply current—max.170 mA
Minimum operating temperature- 40 C
Maximum operating temperature+ 85 C
seriesMT46H
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
Installation styleSMD/SMT
Factory packaging quantity1000
2Gb: x16, x32 Automotive LPDDR SDRAM
Features
Automotive LPDDR SDRAM
MT46H128M16LF – 32 Meg x 16 x 4 Banks
MT46H64M32LF – 16 Meg x 32 x 4 Banks
Features
• V
DD
/V
DDQ
= 1.70–1.95V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• 4 internal banks for concurrent operation
• Data masks (DM) for masking write data; one mask
per byte
• Programmable burst lengths (BL): 2, 4, 8, or 16
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS-compatible inputs
• Temperature-compensated self refresh (TCSR)
2
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Status read register (SRR)
• Selectable output drive strength (DS)
• Clock stop capability
• 64ms refresh; 32ms for the automotive temperature
range
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
-48
Clock Rate
208 MHz
Access Time
4.8ns
Options
• V
DD
/V
DDQ
– 1.8V/1.8V
• Configuration
– 128 Meg x 16 (32 Meg x 16 x 4 banks)
– 64 Meg x 32 (16 Meg x 32 x 4 banks)
• Addressing
– JEDEC-standard
• Plastic "green" package
– 60-ball VFBGA (8mm x 9mm)
– 90-ball VFBGA (8mm x 13mm)
• Timing – cycle time
– 4.8ns @ CL = 3 (208 MHz)
• Special Options
– Automotive (package-level burn-in)
• Operating temperature range
– From –40˚C to +85˚C
– From –40˚C to +105˚C
1
• Design revision
Notes:
1. Contact factory for availability.
2. Self refresh supported up to 85 ºC.
Mark
H
128M16
64M32
LF
DD
BQ
-48
A
IT
AT
:C
Table 2: Configuration Addressing – 2Gb
Architecture
Configuration
Refresh count
Row addressing
Column addressing
128 Meg x 16
32 Meg x 16 x 4 banks
8K
16K A[13:0]
2K A11, A[9:0]
64 Meg x 32
16 Meg x 32 x 4 banks
8K
16K A[13:0]
1K A[9:0]
09005aef8541eee0
t89m_auto_lpddr.pdf - Rev. I 05/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.

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