MCC
Features
•
•
•
•
•
•
omponents
20736 Marilla
Street Chatsworth
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$
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MMS8550
SOT-23 Plastic-Encapsulate Transistors
Capable of 0.3Watts(Tamb=25
O
C) of Power Dissipation.
Collector-current 0.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Marking Code: 2TY
PNP Silicon
Plastic-Encapsulate
Transistor
SOT-23
A
D
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=0.1mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=40Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=20Vdc, I
B
=0)
Emitter Cutoff Current
(V
EB
=3.0Vdc, I
C
=0)
DC Current Gain
(I
C
=50mAdc, V
CE
=1.0Vdc)
DC Current Gain
(I
C
=500mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base- Emitter Voltage
(I
E
=100mAdc)
Transistor Frequency
(I
C
=20mAdc, V
CE
=6.0Vdc, f=30MHz)
Min
40
25
5.0
---
---
---
Max
---
---
---
0.1
0.1
0.1
Units
Vdc
Vdc
Vdc
F
E
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
C
B
uAdc
uAdc
G
H
J
uAdc
DIMENSIONS
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
EB
120
50
---
---
---
350
---
0.6
1.2
1.4
---
---
Vdc
Vdc
Vdc
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
SMALL-SIGNAL CHARACTERISTICS
f
T
150
---
MHz
Suggested Solder
Pad Layout
.031
.800
.035
.900
CLASSIFICATION OF H
FE (1)
Rank
Range
L
120-200
H
200-350
.037
.950
.037
.950
.079
2.000
inches
mm
www.mccsemi.com
Revision: 2
2003/04/30
Test/Measurement
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