MMS8550L datasheet, PDF - EEWORLD Datasheet

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MMS8550L: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size85KB，1 Pages; ManufacturerMicro Commercial Components (MCC)

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MMS8550L Overview

Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

MMS8550L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Micro Commercial Components (MCC)
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

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MCC

Features

•

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

MMS8550

SOT-23 Plastic-Encapsulate Transistors

Capable of 0.3Watts(Tamb=25

O

C) of Power Dissipation.

Collector-current 0.5A

Collector-base Voltage 40V

Operating and storage junction temperature range: -55

O

C to +150

O

C

Marking Code: 2TY

PNP Silicon

Plastic-Encapsulate

Transistor

SOT-23

A

D

Electrical Characteristics @ 25

O

C Unless Otherwise Specified

Symbol

Parameter

Collector-Base Breakdown Voltage

(I

C

=100uAdc, I

E

=0)

Collector-Emitter Breakdown Voltage

(I

C

=0.1mAdc, I

B

=0)

Emitter-Base Breakdown Voltage

(I

E

=100uAdc, I

C

=0)

Collector Cutoff Current

(V

CB

=40Vdc, I

E

=0)

Collector Cutoff Current

(V

CE

=20Vdc, I

B

=0)

Emitter Cutoff Current

(V

EB

=3.0Vdc, I

C

=0)

DC Current Gain

(I

C

=50mAdc, V

CE

=1.0Vdc)

DC Current Gain

(I

C

=500mAdc, V

CE

=1.0Vdc)

Collector-Emitter Saturation Voltage

(I

C

=500mAdc, I

B

=50mAdc)

Base-Emitter Saturation Voltage

(I

C

=500mAdc, I

B

=50mAdc)

Base- Emitter Voltage

(I

E

=100mAdc)

Transistor Frequency

(I

C

=20mAdc, V

CE

=6.0Vdc, f=30MHz)

Min

40

25

5.0

---

Max

---

0.1

Units

Vdc

F

E

OFF CHARACTERISTICS

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEO

I

EBO

C

B

uAdc

G

H

J

uAdc

DIMENSIONS

ON CHARACTERISTICS

h

FE(1)

h

FE(2)

V

CE(sat)

V

BE(sat)

V

EB

120

50

---

350

---

0.6

1.2

1.4

---

Vdc

DIM

A

B

C

D

E

F

G

H

J

K

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MM

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

SMALL-SIGNAL CHARACTERISTICS

f

T

150

---

MHz

Suggested Solder

Pad Layout

.031

.800

.035

.900

CLASSIFICATION OF H

FE (1)

Rank

Range

L

120-200

H

200-350

.037

.950

.037

.950

.079

2.000

inches

mm

www.mccsemi.com

Revision: 2

2003/04/30

MMS8550L Related Products

	MMS8550L	MMS8550H-TP	MMS8550L-TP
Description	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3	500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
Is it Rohs certified?	incompatible	conform to	conform to
Maker	Micro Commercial Components (MCC)	Micro Commercial Components (MCC)	Micro Commercial Components (MCC)
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	PLASTIC PACKAGE-3
Contacts	3	3	3
Reach Compliance Code	compli	compliant	compliant
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	25 V	25 V	25 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	200	200	120
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e3	e3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240	260	260
Polarity/channel type	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	TIN LEAD	MATTE TIN	MATTE TIN
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	10	10
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz
Is it lead-free?	-	Lead free	Lead free
Humidity sensitivity level	-	1	1

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