MMS8550L-TP datasheet, PDF - EEWORLD Datasheet

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MMS8550L-TP: Description500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size85KB，1 Pages; ManufacturerMicro Commercial Components (MCC); Environmental Compliance

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MMS8550L-TP Overview

500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3

MMS8550L-TP Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Micro Commercial Components (MCC)
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	compliant
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

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MCC

Features

•

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

MMS8550

SOT-23 Plastic-Encapsulate Transistors

Capable of 0.3Watts(Tamb=25

C) of Power Dissipation.

Collector-current 0.5A

Collector-base Voltage 40V

Operating and storage junction temperature range: -55

C to +150

Marking Code: 2TY

PNP Silicon

Plastic-Encapsulate

Transistor

SOT-23

Electrical Characteristics @ 25

C Unless Otherwise Specified

Symbol

Parameter

Collector-Base Breakdown Voltage

=100uAdc, I

=0)

Collector-Emitter Breakdown Voltage

=0.1mAdc, I

=0)

Emitter-Base Breakdown Voltage

=100uAdc, I

=0)

Collector Cutoff Current

=40Vdc, I

=0)

Collector Cutoff Current

=20Vdc, I

=0)

Emitter Cutoff Current

=3.0Vdc, I

=0)

DC Current Gain

=50mAdc, V

=1.0Vdc)

DC Current Gain

=500mAdc, V

=1.0Vdc)

Collector-Emitter Saturation Voltage

=500mAdc, I

=50mAdc)

Base-Emitter Saturation Voltage

=500mAdc, I

=50mAdc)

Base- Emitter Voltage

=100mAdc)

Transistor Frequency

=20mAdc, V

=6.0Vdc, f=30MHz)

Min

5.0

---

Max

---

0.1

Units

Vdc

OFF CHARACTERISTICS

(BR)CBO

(BR)CEO

(BR)EBO

CBO

CEO

EBO

uAdc

DIMENSIONS

ON CHARACTERISTICS

FE(1)

FE(2)

CE(sat)

BE(sat)

120

---

350

---

0.6

1.2

1.4

---

Vdc

DIM

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

SMALL-SIGNAL CHARACTERISTICS

150

---

MHz

Suggested Solder

Pad Layout

.031

.800

.035

.900

CLASSIFICATION OF H

FE (1)

Rank

Range

120-200

200-350

.037

.950

.037

.950

.079

2.000

inches

www.mccsemi.com

Revision: 2

2003/04/30

MMS8550L-TP Related Products

	MMS8550L-TP	MMS8550H-TP	MMS8550L
Description	500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3	500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
Is it Rohs certified?	conform to	conform to	incompatible
Maker	Micro Commercial Components (MCC)	Micro Commercial Components (MCC)	Micro Commercial Components (MCC)
package instruction	PLASTIC PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Reach Compliance Code	compliant	compliant	compli
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	25 V	25 V	25 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	200	200
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e0
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	240
Polarity/channel type	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	MATTE TIN	MATTE TIN	TIN LEAD
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	10	10	30
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz
Is it lead-free?	Lead free	Lead free	-
Humidity sensitivity level	1	1	-

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