1N6626 thru 1N6631
VOIDLESS-HERMETICALLY-SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/590 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N6626US thru 1N6631US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including standard, fast and ultrafast
device types in both through-hole and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
“E” Package
FEATURES
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Popular JEDEC registered 1N6626 to 1N6631 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category
I”
Metallurgical bonds
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/590
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “SP” prefix, e.g. SP6626,
SP6629, etc.
Surface mount equivalents also available in a square end-
cap MELF configuration with “US” suffix (see separate
data sheet for 1N6626US thru 1N6631US)
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APPLICATIONS / BENEFITS
Ultrafast recovery rectifier series 200 to 1000 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
•
MAXIMUM RATINGS
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Junction Temperature: -65
o
C to +150
o
C
Storage Temperature: -65
o
C to +175
o
C
Peak Forward Surge Current @ 25
o
C: 75A (except
1N6631 which is 60A)
Note: Test pulse = 8.3ms, half-sine wave.
o
Average Rectified Forward Current (I
O
) at T
L
= +75 C
(L=.375 inch from body):
1N6626 thru 1N6628
2.3 A
1N6629 thru 1N6631
1.8 A
o
(Derate I
O
linearly at 1.0%/ C for T
L
> +75
o
C)
Average Rectified Forward Current (I
O
) at T
A
=25
o
C:
1N6626 thru 1N6628
1.75 A
1N6629 thru 1N6631
1.40 A
o
(Derate I
O
linearly at 0.80%/ C for T
A
>+25
o
C. This I
O
rating is typical for PC boards where thermal resistance
from mounting point to ambient is sufficiently controlled
where T
J(max)
is not exceeded. See MIL-PRF-19500/590)
Thermal Resistance L= 0.375 inch (R
θ
JL
): 22
o
C/W
Capacitance at V
R
= 10 V: 40 pF
o
Solder temperature: 260 C for 10 s (maximum)
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MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead
(Sn/Pb) over Copper.
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 750 mg
See package dimensions on last page
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1N6626 thru 1N6631
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Copyright
©
2009
10-01-2009 REV F; SA7-57.pdf
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6626 thru 1N6631
VOIDLESS-HERMETICALLY-SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
SCOTTSDALE DIVISION
ELECTRICAL CHARACTERISTICS @ 25
o
C
TYPE
NUMBER
MINIMUM
BREAK-
DOWN
VOLTAGE
V
R
I
R
= 50
μA
MAXIMUM
FORWARD
VOLTAGE
V
F
@ I
F
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
MAXIMUM
REVERSE
CURRENT I
R
@
V
RWM
T
A
=25
o
C
T
A
=150
o
C
MAXIMUM
REVERSE
RECOVERY
TIME (LOW
CURRENT)
t
rr
Note 1
MAXIMUM
REVERSE
RECOVERY
TIME (HIGH
CURRENT)
t
rr
Note 2
PEAK
RECOVERY
CURRENT
I
RM
(rec)
I
F
= 2 A,
100 A/μs
Note 2
FORWARD
RECOVERY
VOLTAGE
V
FRM
Max
I
F
= 0.5 A
t
r
= 12 ns
WWW .
Microsemi
.C
OM
V
V@A
V@A
V
ns
ns
μA
μA
1N6626
220
1.35V @ 2.0 A 1.50V @ 4.0A
200
2.0
500
30
45
1N6627
440
1.35V @ 2.0 A 1.50V @ 4.0A
400
2.0
500
30
45
1N6628
660
1.35V @ 2.0 A 1.50V @ 4.0A
600
2.0
500
30
45
1N6629
880
1.40V @ 1.4 A 1.70V @ 3.0A
800
2.0
500
50
60
1N6630
990
1.40V @ 1.4 A 1.70V @ 3.0A
900
2.0
500
50
60
1N6631
1100
1.60V @ 1.4 A 1.95V @ 2.0A
1000
4.0
600
60
80
NOTE 1: Low Current Reverse Recovery Time Test Conditions: I
F
=0.5A, I
RM
=1.0A, I
R(REC)
= 0.25A per MIL-STD-750,
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: I
F
= 2 A, 100 A/μs MIL-STD-750, Method 4031,
Condition D.
A
3.5
3.5
3.5
4.2
4.2
5.0
V
8
8
8
12
12
20
Symbol
V
BR
V
RWM
V
F
I
R
C
t
rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
CHARTS AND GRAPHS
1N6626 thru 1N6631
FIGURE 1
Typical Forward Current
vs
Forward Voltage
Copyright
©
2009
10-01-2009 REV F; SA7-57.pdf
FIGURE 2
Typical Forward Current
vs
Forward Voltage
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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