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KV2301-00

Description
varactor diode
CategoryDiscrete semiconductor    diode   
File Size86KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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KV2301-00 Overview

varactor diode

KV2301-00 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
package instructionS-XUUC-N2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage22 V
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio6.6
Nominal diode capacitance110 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandULTRA HIGH FREQUENCY
JESD-30 codeS-XUUC-N2
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Certification statusNot Qualified
minimum quality factor80
Maximum repetitive peak reverse voltage22 V
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Varactor Diode ClassificationHYPERABRUPT
KV2001 – KV2801
TM
®
VARACTOR DIODES
HF/VHF/UHF Hyperabrupt Junction
RoHS Compliant
DESCRIPTION
These families of hyperabrupt junction RF varactor diodes feature
computer controlled grown junction epitaxy which provides extraordinary
consistency and the highest Q available in a 22 Volt hyperabrupt varactor.
These series give the designer a full capacitance range of 10 to 500 pF at 3
or 4 volts of bias, depending on product series. They allow octave tuning of
LC tanks through 500 MHz. With a reduced 1.5 to 1 frequency ratio,
straight-line-frequency tuning over a 3 to 8 volt tuning range is possible.
Ultrahigh Q and excellent large signal handling capabilities, along with a 2
to 1 capacitance ratio, is obtained by tuning from 9 to 20 volts of reverse
bias. Linear, wide deviation tuning of VCXO/TCXO’S and frequency
modulators also results when these diodes are tuned over a 3 to 8 volt bias
range.
Closely matched sets of all HF-VHF diodes are available along with “A”
suffix versions having ±5% capacitance tolerance at 3 or 4 volts of reverse
bias depending on series selected.
KEY FEATURES
Available as packaged devices or
as chips for hybrid applications
Octave Tuning Range
Ultrahigh Q
Available with 5% Tolerance C
T
www.MICROSEMI.com
APPLICATIONS
These families of hyperabrupt varactors are ideal for wide bandwidth
VCOs. They also provide excellent performance in frequency modulators,
voltage variable filters, analog phase shifters, TCXOs and VCXOs.
APPLICATIONS/BENEFITS
Values cover the entire HF / VHV
/ UHF spectrum;
Highest Q / lowest VCO phase
noise
Tough MIL-Spec SiO
2
passivation
Dozens of package outlines
available
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Maximum Working Voltage
Storage Temperature
Operating Temperature
Symbol
V
R
T
STG
T
OP
Value
22
-65 to +150
-55 to +150
Unit
V
KV2001-KV2801
KV2001-KV2801
ºC
ºC
IMPORTANT:
For the most current data, consult our website:
www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information
.
These devices are ESD sensitive and must be handled using ESD precautions.
Unless otherwise specified, these products
are supplied with Gold terminations suitable
for RoHS compliant assembly.
1
Copyright
2007
Rev: 2009-01-19
Microsemi
Microwave Products
Page 1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

KV2301-00 Related Products

KV2301-00 KV2801-00 KV2101-00
Description varactor diode varactor diode varactor diode
Is it Rohs certified? conform to conform to conform to
Maker Microsemi Microsemi Microsemi
package instruction S-XUUC-N2 S-XUUC-N2 ROHS COMPLIANT PACKAGE-2
Contacts 2 2 2
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Minimum breakdown voltage 22 V 22 V 22 V
Configuration SINGLE SINGLE SINGLE
Diode Capacitance Tolerance 5% 5% 5%
Minimum diode capacitance ratio 6.6 5.9 5.4
Nominal diode capacitance 110 pF 50 pF 20 pF
Diode component materials SILICON SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
frequency band ULTRA HIGH FREQUENCY ULTRA HIGH FREQUENCY ULTRA HIGH FREQUENCY
JESD-30 code S-XUUC-N2 S-XUUC-N2 S-XUUC-N2
Number of components 1 1 1
Number of terminals 2 2 2
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape SQUARE SQUARE SQUARE
Package form UNCASED CHIP UNCASED CHIP UNCASED CHIP
Certification status Not Qualified Not Qualified Not Qualified
minimum quality factor 80 200 300
Maximum repetitive peak reverse voltage 22 V 22 V 22 V
surface mount YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location UPPER UPPER UPPER
Varactor Diode Classification HYPERABRUPT HYPERABRUPT HYPERABRUPT
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