QPD1017
450W, 50V, 3.1 – 3.5 GHz, GaN RF IMFET
Product Overview
The QPD1017 is a 450 W (P
3dB
) internally matched discrete
GaN on SiC HEMT which operates from 3.1 to 3.5 GHz on
a 50V supply rail. The device is GaN IMFET fully matched
to 50 Ω in an industry standard air cavity package and is
ideally suited for military radar.
ROHS compliant.
Evaluation boards are available upon request.
17.40 x 24.00 x 4.31 mm
Key Features
1
•
•
•
•
•
•
•
•
Frequency: 3.1 to 3.5 GHz
Output Power (P
3dB
)
1
: 460 W
Linear Gain
1
: 16.5 dB
Typical DE
3dB1
: 63%
Typical PAE
3dB1
: 60%
Operating Voltage: 50 V
Low thermal resistance package
Pulse capable
Note 1: @ 3.3 GHz
Functional Block Diagram
Applications
•
Military radar
•
Civilian radar
•
Test instrumentation
Ordering Information
Part No.
QPD1017
QPD1017SB
QPD1017PCB4B01
Description
3.1 – 3.5 GHz RF IMFET
3.1 – 3.5 GHz Sample
3.1 – 3.5 GHz EVB
Datasheet Rev. D, Aug 24, 2018 | Subject to change without notice
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QPD1017
450W, 50V, 3.1 – 3.5 GHz, GaN RF IMFET
Absolute Maximum Ratings
1
Parameter
Breakdown Voltage,BV
DG
Gate Voltage Range, V
G
Drain Current
Gate Current Range, I
G
Power Dissipation, 10% DC
100 uS PW, P
D
, T = 85°C
RF Input Power, 10% DC
100 uS PW, 3.3 GHz, T =
25°C
Mounting Temperature
(30 Seconds)
Storage Temperature
Recommended Operating Conditions
1, 2, 3, 4
Units
V
V
A
mA
W
dBm
°C
°C
Rating
+145
-7 to +2
20
See page 4.
511
+49
320
−65 to +150
Parameter
Operating Temp. Range
Drain Voltage Range, V
D
Drain Bias Current, I
DQ
Drain Current, I
D
Gate Voltage, V
G4
Power Dissipation, Pulsed
(P
D
)
2, 3
Min
−40
+28
–
–
–
–
Typ
+25
+50
750
15
−2.8
–
Max Units
+85
+55
–
–
–
476
°C
V
mA
A
V
W
Notes:
1. Operation of this device outside the parameter ranges
given above may cause permanent damage.
Notes:
1. Electrical performance is measured under conditions noted
in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
2. Package base at 85°C
3. Pulse Width = 100 uS, Duty Cycle = 10%
4. To be adjusted to desired I
DQ
Pulsed Characterization
–
Load-Pull Performance
–
Power Tuned
1
Parameters
Frequency, F
Linear Gain, G
LIN
Output Power at 3dB
compression point, P
3dB
Power-Added-Efficiency at 3dB
compression point, PAE
3dB
Gain at 3dB compression point
3.1
14.8
57.9
57.5
11.8
Typical Values
3.3
15.7
57.8
56.4
12.7
3.5
15.5
57.6
54.7
12.5
Unit
GHz
dB
dBm
%
dB
Notes:
1. Test conditions unless otherwise noted: V
D
= 50 V, I
DQ
= 750 mA, Temp = 25°C, 100 uS PW, 10% DC
Pulsed Characterization
–
Load-Pull Performance
–
Efficiency Tuned
1
Parameters
Frequency, F
Linear Gain, G
LIN
Output Power at 3dB
compression point, P
3dB
Power-Added-Efficiency at 3dB
compression point, PAE
3dB
Gain at 3dB compression point,
G
3dB
3.1
15.8
56.1
68.0
12.8
Typical Values
3.3
16.8
56.2
66.0
13.8
3.5
16.8
55.9
65.0
13.8
Unit
GHz
dB
dBm
%
dB
Notes:
1. Test conditions unless otherwise noted: V
D
= 50 V, I
DQ
= 750 mA, Temp = 25°C, 100 uS PW, 10% DC
Datasheet Rev. D, Aug 24, 2018 | Subject to change without notice
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QPD1017
450W, 50V, 3.1 – 3.5 GHz, GaN RF IMFET
RF Characterization – 3.1 – 3.5 GHz EVB Performance At 3.1 GHz
1
Parameter
Linear Gain, G
LIN
Output Power at 3dB compression point, P
3dB
Power-Added Efficiency at 3dB compression point,
PAE
3dB
Gain at 3dB compression point, G
3dB
Notes:
1. V
D
= 50 V, I
DQ
= 750 mA, Temp = 25°C, 100 uS PW, 10% DC
Min
–
–
–
–
Typ
15.4
56.6
57.1
12.4
Max
–
–
–
–
Units
dB
dBm
%
dB
RF Characterization – 3.1 – 3.5 GHz EVB Performance At 3.3 GHz
1
Parameter
Linear Gain, G
LIN
Output Power at 3dB compression point, P
3dB
Power-Added Efficiency at 3dB compression point,
PAE
3dB
Gain at 3dB compression point, G
3dB
Notes:
1. V
D
= 50 V, I
DQ
= 750 mA, Temp = 25°C, 100 uS PW, 10% DC
Min
–
–
–
–
Typ
16.0
56.3
54.6
13.0
Max
–
–
–
–
Units
dB
dBm
%
dB
RF Characterization – 3.1 – 3.5 GHz EVB Performance At 3.5 GHz
1
Parameter
Linear Gain, G
LIN
Output Power at 3dB compression point, P
3dB
Power-Added Efficiency at 3dB compression point,
PAE
3dB
Gain at 3dB compression point, G
3dB
Notes:
1. V
D
= 50 V, I
DQ
= 750 mA, Temp = 25°C, 100 uS PW, 10% DC
Min
–
–
–
–
Typ
16.2
56.2
54.1
13.2
Max
–
–
–
–
Units
dB
dBm
%
dB
RF Characterization – Mismatch Ruggedness at 3.1, 3.3 & 3.5 GHz
1, 2, 3
Symbol Parameter
VSWR
Impedance Mismatch Ruggedness
dB Compression
3
Typical
10:1
Notes:
1. Test conditions unless otherwise noted: T
A
= 25°C, V
D
= 50 V, I
DQ
= 750 mA, 100 uS PW, 10% DC.
2. Driving input power is determined at pulsed compression under matched condition at EVB output connector.
3. No spur detected down to the noise floor of Spectrum Analyzer from 1 – 15GHz at T
A
= -40°C.
Datasheet Rev. D, Aug 24, 2018 | Subject to change without notice
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QPD1017
450W, 50V, 3.1 – 3.5 GHz, GaN RF IMFET
Maximum Gate Current
Datasheet Rev. D, Aug 24, 2018 | Subject to change without notice
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QPD1017
450W, 50V, 3.1 – 3.5 GHz, GaN RF IMFET
Thermal and Reliability Information – Pulsed
1
Parameter
Thermal Resistance,
(θ
JC
)
Peak IR Surface Temperature
1
(T
CH
)
IR
1
Conditions
85°C back side temperature
346 W Pdiss, 1 mS PW, 10% DC
Values
0.33
200
Units
°C/W
°C
Notes:
1- Refer to the following document:
GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Datasheet Rev. D, Aug 24, 2018 | Subject to change without notice
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