C103Y datasheet, PDF - EEWORLD Datasheet

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C103Y: DescriptionSILICON CONTROLLED RECTIFIER; CategoryAnalog mixed-signal IC Trigger device; File Size119KB，2 Pages; ManufacturerCentral Semiconductor

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C103Y Overview

SILICON CONTROLLED RECTIFIER

C103Y Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	TO-92
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Nominal circuit commutation break time	15 µs
Configuration	SINGLE
Maximum DC gate trigger current	0.2 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	5 mA
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Maximum leakage current	0.001 mA
On-state non-repetitive peak current	8 A
Number of components	1
Number of terminals	3
Maximum on-state current	800 A
Maximum operating temperature	125 °C
Minimum operating temperature	-60 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	0.8 A
Off-state repetitive peak voltage	30 V
Repeated peak reverse voltage	30 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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DATA SHEET

C103Y

C103YY

C103A

C103B

SILICON CONTROLLED RECTIFIER

0.8 AMP, 30 THRU 200 VOLTS

TO-92 CASE

DESCRIPTION

The CENTRAL SEMICONDUCTOR C103 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for

control systems and sensing circuit applications.

MAXIMUM RATINGS (TC=25°C unless otherwise noted)

Peak Repetitive Off-State Voltage

RMS On-State Current (TC=60°C)

Peak One Cycle Surge

Peak Forward Gate Current

Peak Reverse Gate Voltage

Peak Gate Power Dissipation (tp=8.3ms)

Average Gate Power Dissipation

Storage Temperature

Junction Temperature

SYMBOL

VDRM, VRRM

IT(RMS)

ITSM

IGM

VGM

PGM

PG(AV)

Tstg

C103Y

C103YY

C103A

100

0.8

8.0

0.5

8.0

1.0

0.01

-65 to +150

-65 to +125

C103B

200

UNITS

°C

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

SYMBOL

IDRM, IRRM

IGT

VGT

VTM

dv/dt

TEST CONDITIONS

Rated VDRM, VRRM, RGK=1KΩ

Rated VDRM, VRRM, TC=125°C, RGK=1KΩ

VD=6.0V, RL=100Ω, RGK=1KΩ

VD=6.0V, RL=100Ω, RGK=1KΩ, TC=-65°C

RGK=1KΩ

RGK=1KΩ, TC=-65°C

VD=6.0V, RL=100Ω

VD=6.0V, RL=100Ω, TC=-65°C

VD=6.0V, RL=1KΩ, TC=125°C

ITM=1.0A

VD=VDRM, TC=125°C, RGK=1KΩ

0.1

1.5

MIN

TYP

MAX

1.0

200

500

5.0

0.8

1.0

UNITS

µA

V/µs

(SEE REVERSE SIDE)

C103Y Related Products

	C103Y	C103A	C103B	C103YY
Description	SILICON CONTROLLED RECTIFIER	SILICON CONTROLLED RECTIFIER	SILICON CONTROLLED RECTIFIER	SILICON CONTROLLED RECTIFIER
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-92	TO-92	TO-92	TO-92
package instruction	PLASTIC PACKAGE-3	CYLINDRICAL, O-PBCY-T3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3
Contacts	3	3	3	3
Reach Compliance Code	_compli	_compli	_compli	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Maximum DC gate trigger current	0.2 mA	0.2 mA	0.2 mA	0.2 mA
Maximum DC gate trigger voltage	0.8 V	0.8 V	0.8 V	0.8 V
Maximum holding current	5 mA	5 mA	5 mA	5 mA
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum on-state current	800 A	800 A	800 A	800 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	0.8 A	0.8 A	0.8 A	0.8 A
Off-state repetitive peak voltage	30 V	100 V	200 V	60 V
Repeated peak reverse voltage	30 V	100 V	200 V	60 V
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Trigger device type	SCR	SCR	SCR	SCR
Maker	Central Semiconductor	-	Central Semiconductor	Central Semiconductor
Nominal circuit commutation break time	15 µs	15 µs	15 µs	-
Maximum leakage current	0.001 mA	0.001 mA	0.001 mA	-
On-state non-repetitive peak current	8 A	8 A	8 A	-
Maximum operating temperature	125 °C	125 °C	125 °C	-
Minimum operating temperature	-60 °C	-60 °C	-60 °C	-

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