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C103YY

Description
SILICON CONTROLLED RECTIFIER
CategoryAnalog mixed-signal IC    Trigger device   
File Size119KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

C103YY Overview

SILICON CONTROLLED RECTIFIER

C103YY Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Parts packaging codeTO-92
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
ConfigurationSINGLE
Maximum DC gate trigger current0.2 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current5 mA
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum on-state current800 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current0.8 A
Off-state repetitive peak voltage60 V
Repeated peak reverse voltage60 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
DATA SHEET
C103Y
C103YY
C103A
C103B
SILICON CONTROLLED RECTIFIER
0.8 AMP, 30 THRU 200 VOLTS
TO-92 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR C103 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for
control systems and sensing circuit applications.
MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=60°C)
Peak One Cycle Surge
Peak Forward Gate Current
Peak Reverse Gate Voltage
Peak Gate Power Dissipation (tp=8.3ms)
Average Gate Power Dissipation
Storage Temperature
Junction Temperature
SYMBOL
VDRM, VRRM
IT(RMS)
ITSM
IGM
VGM
PGM
PG(AV)
Tstg
TJ
C103Y
30
C103YY
C103A
60
100
0.8
8.0
0.5
8.0
1.0
0.01
-65 to +150
-65 to +125
C103B
200
UNITS
V
A
A
A
V
W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
SYMBOL
IDRM, IRRM
IDRM, IRRM
IGT
IGT
IH
IH
VGT
VGT
VGT
VTM
dv/dt
TEST CONDITIONS
Rated VDRM, VRRM, RGK=1KΩ
Rated VDRM, VRRM, TC=125°C, RGK=1KΩ
VD=6.0V, RL=100Ω, RGK=1KΩ
VD=6.0V, RL=100Ω, RGK=1KΩ, TC=-65°C
RGK=1KΩ
RGK=1KΩ, TC=-65°C
VD=6.0V, RL=100Ω
VD=6.0V, RL=100Ω, TC=-65°C
VD=6.0V, RL=1KΩ, TC=125°C
ITM=1.0A
VD=VDRM, TC=125°C, RGK=1KΩ
0.1
1.5
20
MIN
TYP
MAX
1.0
50
200
500
5.0
10
0.8
1.0
UNITS
µA
µA
µA
µA
mA
mA
V
V
V
V
V/µs
(SEE REVERSE SIDE)
R0

C103YY Related Products

C103YY C103A C103B C103Y
Description SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible
Parts packaging code TO-92 TO-92 TO-92 TO-92
package instruction PLASTIC PACKAGE-3 CYLINDRICAL, O-PBCY-T3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Contacts 3 3 3 3
Reach Compliance Code _compli _compli _compli _compli
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE
Maximum DC gate trigger current 0.2 mA 0.2 mA 0.2 mA 0.2 mA
Maximum DC gate trigger voltage 0.8 V 0.8 V 0.8 V 0.8 V
Maximum holding current 5 mA 5 mA 5 mA 5 mA
JEDEC-95 code TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum on-state current 800 A 800 A 800 A 800 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 0.8 A 0.8 A 0.8 A 0.8 A
Off-state repetitive peak voltage 60 V 100 V 200 V 30 V
Repeated peak reverse voltage 60 V 100 V 200 V 30 V
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR SCR SCR
Maker Central Semiconductor - Central Semiconductor Central Semiconductor
Nominal circuit commutation break time - 15 µs 15 µs 15 µs
Maximum leakage current - 0.001 mA 0.001 mA 0.001 mA
On-state non-repetitive peak current - 8 A 8 A 8 A
Maximum operating temperature - 125 °C 125 °C 125 °C
Minimum operating temperature - -60 °C -60 °C -60 °C

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