DS1107SG37 datasheet, PDF - EEWORLD Datasheet

DS1107SG37: DescriptionRectifier Diode, 1 Phase, 1 Element, 1280A, 3700V V(RRM), Silicon,; Categorydiode Rectifier diode; File Size199KB，8 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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DS1107SG37 Overview

Rectifier Diode, 1 Phase, 1 Element, 1280A, 3700V V(RRM), Silicon,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
Reach Compliance Code	unknown
Is Samacsys	N
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.6 V
Maximum non-repetitive peak forward current	12000 A
Number of components	1
Maximum operating temperature	150 °C
Maximum output current	870 A
Maximum repetitive peak reverse voltage	3700 V
surface mount	NO
Base Number Matches	1

	DS1107SG37	DS1107SG40	DS1107SG35	DS1107SG36	DS1107SG38	DS1107SG39
Description	Rectifier Diode, 1 Phase, 1 Element, 1280A, 3700V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 1280A, 4000V V(RRM), Silicon,	Rectifier Diode, 1 Element, 870A, 3500V V(RRM),	Rectifier Diode, 1 Element, 1120A, 3600V V(RRM),	Rectifier Diode, 1 Phase, 1 Element, 1280A, 3800V V(RRM), Silicon,	Rectifier Diode, 1 Element, 870A, 3900V V(RRM),
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.6 V	1.6 V	1.6 V	1.6 V	1.6 V	1.6 V
Maximum non-repetitive peak forward current	12000 A	12000 A	12000 A	12000 A	12000 A	12000 A
Number of components	1	1	1	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	870 A	870 A	870 A	1120 A	870 A	870 A
Maximum repetitive peak reverse voltage	3700 V	4000 V	3500 V	3600 V	3800 V	3900 V
surface mount	NO	NO	NO	NO	NO	NO

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