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1N5818

Description
1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL
CategoryDiscrete semiconductor    diode   
File Size40KB,9 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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1N5818 Overview

1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL

1N5818 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.875 V
JESD-609 codee0
Maximum non-repetitive peak forward current25 A
Number of components1
Maximum operating temperature125 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage30 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
1N5817; 1N5818; 1N5819
Schottky barrier diodes
Product specification
Supersedes data of April 1992
1996 May 03

1N5818 Related Products

1N5818 1N5817 1N5819
Description 1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL RECTIFIER DIODE,SCHOTTKY,20V V(RRM),DO-41 1 A, 45 V, SILICON, SIGNAL DIODE
Is it Rohs certified? incompatible incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown unknown
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.875 V 0.75 V 0.9 V
JESD-609 code e0 e0 e0
Maximum non-repetitive peak forward current 25 A 25 A 25 A
Number of components 1 1 1
Maximum operating temperature 125 °C 125 °C 125 °C
Maximum output current 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 30 V 20 V 40 V
surface mount NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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