1N5822US datasheet, PDF - EEWORLD Datasheet

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1N5822US: Description3 A, 40 V, SILICON, RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size40KB，2 Pages; ManufacturerCDI-DIODE; Websitehttp://www.cdi-diodes.com

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1N5822US Overview

3 A, 40 V, SILICON, RECTIFIER DIODE

1N5822US Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	HERMETIC SEALED, D5B, 2 PIN
state	TRANSFERRED
packaging shape	round
Package Size	LONG FORM
surface mount	Yes
Terminal form	WRAP AROUND
terminal coating	tin lead
Terminal location	END
Packaging Materials	Glass
Craftsmanship	SCHOTTKY
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	rectifier diode
application	GENERAL PURPOSE
Phase	1
Maximum repetitive peak reverse voltage	40 V
Maximum average forward current	3 A

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• 1N5822US AVAILABLE IN

JAN, JANTX, JANTXV AND JANS

PER MIL-PRF-19500/620

• 3 AMP SCHOTTKY BARRIER RECTIFIERS

• HERMETICALLY SEALED

• LEADLESS PACKAGE FOR SURFACE MOUNT

• METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION

1N5820US

thru

1N5822US

MAXIMUM RATINGS

Operating Temperature: -65°C to +125°C

Storage Temperature: -65°C to +150°C

Average Rectified Forward Current: 3.0 AMP, TEC = +55°C

Derating: 43 mA / °C above TEC = +55°C

DIM

MILLIMETERS

MIN

MAX

3.48

3.76

0.48

0.71

5.08

5.72

0.03MIN.

INCHES

MIN MAX

.137 .148

0.019 0.028

.200 .225

.001MIN.

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise specified.

FIGURE 1

CDI

TYPE

NUMBER

WORKING PEAK

REVERSE

VOLTAGE

RWM

VOLTS

MAXIMUM FORWARD VOLTAGE

F @ 9.4A

VOLTS

0.70

MAXIMUM REVERSE

LEAKAGE CURRENT

AT RATED VOLTAGE

R @ 25°C

0.10

R @ 100°C

12.5

DESIGN DATA

CASE:

D-5B, Hermetically sealed glass

case, PER MIL-PRF 19500/620

LEAD FINISH:

Tin / Lead

THERMAL RESISTANCE: (R

OJEC):

10 ˚C/W maximum at L = 0 inch

THERMAL IMPEDANCE: (Z

OJX): 3

˚C/W maximum

POLARITY:

Cathode end is banded.

MOUNTING SURFACE SELECTION:

The Axial Coefficient of Expansion

(COE) of this device is approximately

+ 4PPM / °C. The COE of the Mounting

Surface System should be selected to

provide a suitable match with this

device.

F @ 1.0A

VOLTS

0.40

F @ 3.0A

VOLTS

0.50

1N5820US

1N5821US

1N5822US

J,JX, JV & JS

5822US

22 COREY STREET, MELROSE, MASSACHUSETTS 02176

PHONE (781) 665-1071

FAX (781) 665-7379

WEBSITE: http://www.cdi-diodes.com

E-mail: mail@cdi-diodes.com

1N5822US Related Products

	1N5822US	1N5820US	1N5821US	JS5822US	JV5822US	JX5822US	J5822US
Description	3 A, 40 V, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE	3 AMP SCHOTTKY BARRIER RECTIFIERS	3 AMP SCHOTTKY BARRIER RECTIFIERS	3 A, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE

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