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CJQ4438

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 8.2A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 22mΩ @ 8.2A, 10V Maximum power dissipation ( Ta=25°C): 1.25W Type: N-channel 60V, 8.2A, N-Channel MOSFET
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size645KB,5 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet Parametric View All

CJQ4438 Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 8.2A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 22mΩ @ 8.2A, 10V Maximum power dissipation ( Ta=25°C): 1.25W Type: N-channel 60V, 8.2A, N-Channel MOSFET

CJQ4438 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C8.2A
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance22mΩ @ 8.2A,10V
Maximum power dissipation (Ta=25°C)1.25W
typeN channel

CJQ4438 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4438
V
(BR)DSS
60
V
N-Channel MOSFET
R
DS(on)
MAX
22mΩ@10V
36m
Ω@
4.5V 
 
I
D
8.2A
SOP8
FEATURE
TrenchFET Power MOSFET
Low R
DS
(on)
Low
Gate Charge
MARKING
APPLICATION
Load Switch
PWM applications
Equivalent Circuit
Q4438 = Device code
Q4438
YY
Q4438
YY
Solid dot=Pin1 indicator
Solid dot = Green molding compound device,
if none, the normal device
YY=Date Code
Front side
Maximum ratings (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current
(note 2)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
T
J
T
STG
Value
60
±20
8.2
40
1.25
100
150
-55~+150
Unit
V
V
A
A
W
℃/W
www.cj-elec.com
1
I,May,2015
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