VBE1101M datasheet, PDF - EEWORLD Datasheet

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VBE1101M: DescriptionDrain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 15A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 114mΩ @ 3A, 10V Maximum power consumption Dispersion (Ta=25°C): 3W Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size725KB，7 Pages; ManufacturerVBsemi Electronics Co. Ltd.; Websitehttp://www.vbsemi.tw/; Founded in 2000, VBsemi is the most competitive power semiconductor component manufacturer of MOSFET in Taiwan. The company has obtained many product invention patents and has been certified by ISO14001, QS9000, and ISO9001. VBsemi is a Taiwanese company that independently develops, produces, and sells MOSFET under its own brand. From component design, wafer processing, packaging, characteristic analysis, testing, and customer service, it is marketed worldwide. The company's products have been widely used in UPS, Power Inverter, CCFL, DC Fan, SMPS, Adapter, Lighting, Battery, DC-DC, LCD Monitor and other fields.

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VBE1101M Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 15A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 114mΩ @ 3A, 10V Maximum power consumption Dispersion (Ta=25°C): 3W Type: N-channel

VBE1101M Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	100V
Continuous drain current (Id) at 25°C	15A(Tc)
Gate-source threshold voltage	2.5V @ 250uA
Drain-source on-resistance	114mΩ @ 3A,10V
Maximum power dissipation (Ta=25°C)	3W
type	N channel

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VBE1101M

www.VBsemi.com

N-Channel 100 V (D-S) MOSFET

PRODUCT SUMMARY

(V)

100

DS(on)

()

0.114 at V

= 10 V

(A)

FEATURES

•

TrenchFET

Power MOSFET

175 °C Junction Temperature

PWM Optimized

100 % R

Tested

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Primary Side Switch

TO-252

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 175 °C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

L = 0.1 mH

= 25 °C

= 125 °C

Symbol

, T

stg

Limit

100

± 20

- 55 to 175

°C

Unit

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient

Junction-to-Case (Drain)

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. See SOA curve for voltage derating.



10 s

Steady State

Symbol

thJA

thJC

Typical

0.85

Maximum

1.1

°C/W

Unit

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