FM28V100-TGTR datasheet, PDF - EEWORLD Datasheet

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FM28V100-TGTR: DescriptionMemory interface type: Parallel Memory capacity: 1Mb (128K x 8) Operating voltage: 2V ~ 3.6V Memory type: Non-Volatile 1-Mbit (128K × 8bit), Operating voltage: 2.0V to 3.6V; Categorystorage FRAM memory; File Size287KB，18 Pages; ManufacturerCypress Semiconductor

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FM28V100-TGTR Overview

Memory interface type: Parallel Memory capacity: 1Mb (128K x 8) Operating voltage: 2V ~ 3.6V Memory type: Non-Volatile 1-Mbit (128K × 8bit), Operating voltage: 2.0V to 3.6V

FM28V100-TGTR Parametric

Parameter Name	Attribute value
Memory architecture (format)	FRAM
Memory interface type	Parallel
memory capacity	1Mb (128K x 8)
Operating Voltage	2V ~ 3.6V
memory type	Non-Volatile

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FM28V100

1-Mbit (128 K × 8) F-RAM Memory

Features

■

32-pin thin small outline package (TSOP) Type I

Restriction of hazardous substances (RoHS) compliant

1-Mbit ferroelectric random access memory (F-RAM) logically

organized as 128 K × 8

❐

High-endurance 100 trillion (10 ) read/writes

❐

151-year data retention (see the

Data Retention and

Endurance

table)

❐

NoDelay™ writes

❐

Page mode operation to 30 ns cycle time

❐

Advanced high-reliability ferroelectric process

SRAM compatible

❐

Industry-standard 128 K × 8 SRAM pinout

❐

60-ns access time, 90-ns cycle time

Superior to battery-backed SRAM modules

❐

No battery concerns

❐

Monolithic reliability

❐

True surface mount solution, no rework steps

❐

Superior for moisture, shock, and vibration

Low power consumption

❐

Active current 7 mA (typ)

❐

Standby current 90

A

(typ)

Low-voltage operation: V

= 2.0 V to 3.6 V

Industrial temperature: –40

C

to +85

C

Functional Overview

The FM28V100 is a 128 K × 8 nonvolatile memory that reads and

writes similar to a standard SRAM. A ferroelectric random

access memory or F-RAM is nonvolatile, which means that data

is retained after power is removed. It provides data retention for

over 151 years while eliminating the reliability concerns,

functional disadvantages, and system design complexities of

battery-backed SRAM (BBSRAM). Fast write timing and high

write endurance make the F-RAM superior to other types of

memory.

The FM28V100 operation is similar to that of other RAM devices

and therefore, it can be used as a drop-in replacement for a

standard SRAM in a system. Read and write cycles may be

triggered by chip enable or simply by changing the address. The

F-RAM memory is nonvolatile due to its unique ferroelectric

memory process. These features make the FM28V100 ideal for

nonvolatile memory applications requiring frequent or rapid

writes.

The device is available in a 32-pin TSOP I surface mount

package. Device specifications are guaranteed over the

industrial temperature range –40 °C to +85 °C.

For a complete list of related documentation, click

here.

■

Logic Block Diagram

Address Latch

A 2-0

...

A 16-0

Row Decoder

A 16-3

128 K x 8

F-RAM Array

CE 1, CE 2

Control

Logic

...

Column Decoder

I/O Latch & Bus Driver

DQ 7-0

Cypress Semiconductor Corporation

Document Number: 001-86202 Rev. *E

•

198 Champion Court

•

San Jose

CA 95134-1709

•

408-943-2600

Revised August 12, 2015

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