ZXMN2B14FH
20V SOT23 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
V
(BR)DSS
R
DS(on)
( )
0.055 @ V
GS
= 4.5V
20
0.075 @ V
GS
= 2.5V
0.100 @ V
GS
= 1.8V
I
D
(A)
4.3
3.7
3.2
Description
This new generation of trench MOSFETs from Zetex features low on-
resistance achievable with low gate drive.
Features
•
•
•
•
Low on-resistance
Fast switching speed
Low gate drive capability
SOT23 package
D
G
S
Applications
•
•
•
•
DC-DC converters
Power management functions
Disconnect switches
Motor control
S
D
G
Ordering information
Device
ZXMN2B14FHTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per reel
Top view
3,000
Device marking
2B4
Issue 2 - March 2007
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1
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ZXMN2B14FH
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
@ V
GS
= 4.5V; T
amb
=25°C (b)
@ V
GS
= 4.5V; T
amb
=70°C (b)
@ V
GS
= 4.5V; T
amb
=25°C (a)
Pulsed drain current (c)
Continuous source current (body diode) (b)
Pulsed source current (body diode) (c)
Power dissipation at T
amb
=25°C (a)
Linear derating factor
Power dissipation at T
amb
=25°C (b)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
I
DM
I
S
I
SM
P
D
Symbol
V
DSS
V
GS
I
D
Limit
20
±8
4.3
3.5
3.5
21
2.4
21
1
8
1.5
12
-55 to +150
A
A
A
W
mW/°C
W
mW/°C
°C
Unit
V
V
A
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Symbol
R
JA
R
JA
Limit
125
82
Unit
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
temperature.
Issue 2 - March 2007
© Zetex Semiconductors plc 2007
2
www.zetex.com
ZXMN2B14FH
Thermal characteristics
Issue 2 - March 2007
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3
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ZXMN2B14FH
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Static
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
(*)
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
0.4
20
1
100
1.0
0.055
0.075
0.100
Forward transconductance
(*) (‡)
Dynamic
(‡)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
(†) (‡)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
(*)
Reverse recovery time
(‡)
Reverse recovery charge
(‡)
V
SD
t
rr
Q
rr
0.69
9.4
2.8
0.95
V
ns
nC
T
j
=25°C, I
S
= 1.45A,
V
GS
=0V
T
j
=25°C, I
F
= 2.4A,
di/dt=100A/ s
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
3.7
5.2
30
5.5
11
1.4
2.1
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10V, V
GS
= 4.5V
I
D
= 4.0A
V
DD
= 10V, V
GS
= 4.5V
I
D
= 1A
R
G
≈
6.0
C
iss
C
oss
C
rss
872
145
90
pF
pF
pF
V
DS
= 10V, V
GS
=0V
f=1MHz
g
fs
11
S
V
A
nA
V
I
D
= 250 A, V
GS
=0V
V
DS
= 20V, V
GS
=0V
V
GS
=±8V, V
DS
=0V
I
D
= 250 A, V
DS
=V
GS
V
GS
= 4.5V, I
D
= 3.5A
V
GS
= 2.5V, I
D
= 3A
V
GS
= 1.8V, I
D
= 2.6A
V
DS
= 10V, I
D
= 3.5A
Symbol
Min.
Typ.
Max. Unit Conditions
NOTES:
(*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 2 - March 2007
© Zetex Semiconductors plc 2007
4
www.zetex.com
ZXMN2B14FH
Typical characteristics
Issue 2 - March 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
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