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LMN200B02-7

Description
Rated power: 200mW Collector current Ic: 200mA PNP, - Collector-emitter breakdown voltage Vce: 50V PNP, - Transistor type: PNP pre-biased, N-channel pre-biased PNP transistor + N-channel MOSFET
CategoryDiscrete semiconductor    Digital transistor   
File Size238KB,10 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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LMN200B02-7 Overview

Rated power: 200mW Collector current Ic: 200mA PNP, - Collector-emitter breakdown voltage Vce: 50V PNP, - Transistor type: PNP pre-biased, N-channel pre-biased PNP transistor + N-channel MOSFET

LMN200B02-7 Parametric

Parameter NameAttribute value
rated power200mW
Collector current Ic200mA PNP,-
Collector-emitter breakdown voltage Vce50V PNP,-
Transistor typePNP pre-biased type, N-channel pre-biased type
LMN200B02
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
WITH GATE PULL DOWN RESISTOR
General Description
LMN200B02 is best suited for applications where the load needs to
be turned on and off using control circuits like micro-controllers,
comparators etc. particularly at a point of load. It features a
discrete pass transistor with stable V
CE(SAT)
which does not
depend on the input voltage and can support continuous maximum
current of 200 mA . It also contains a discrete N-MOSFET that can
be used as control. This N-MOSFET also has a built-in pull down
resistor at its gate. The component can be used as a part of a
circuit or as a stand alone discrete device.
6
5
4
1
2
3
Features
Voltage Controlled Small Signal Switch
N-MOSFET with Gate Pull-Down Resistor
Surface Mount Package
Ideally Suited for Automated Assembly Processes
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Fig. 1: SOT-363
C_Q1
6
B_Q1
5
S_Q2
4
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 8
Ordering Information: See Page 8
Weight: 0.006 grams (approximate)
C
DDTB142JU_DIE
Q1
R2
B
PNP
470
R3
37K
E
R1
10K
S
Q2
NMOS
G
DSNM6047_DIE D
1
E_Q1
2
G_Q2
3
D_Q2
Fig. 2 Schematic and Pin Configuration
Sub-Component P/N
DDTB142JU_DIE
DSNM6047_DIE (with Gate Pull-Down
Resistor)
Reference
Q1
Q2
Device Type
PNP Transistor
N-MOSFET
R1 (NOM)
10K
R2 (NOM)
470
R3 (NOM)
37K
Figure
2
2
Maximum Ratings, Total Device
Characteristic
Power Dissipation (Note 3)
Power Derating Factor above 125°C
Output Current
@T
A
= 25°C unless otherwise specified
Symbol
P
D
P
der
I
out
Value
200
1.6
200
Unit
mW
mW/°C
mA
Thermal Characteristics
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
T
J
,T
STG
R
θ
JA
Value
-55 to +150
625
Unit
°C
°C/W
Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Equivalent to
One Heated Junction of PNP Transistor) (Note 3)
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30658 Rev. 7 - 2
1 of 9
www.diodes.com
LMN200B02
© Diodes Incorporated
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