DMN3033LSNQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
30V
R
DS(on) max
30mΩ @ V
GS
= 10V
40mΩ @ V
GS
= 4.5V
I
D
T
A
= +25°C
6A
4A
Features
Low Gate Charge
Low R
DS(ON)
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP (Note 4)
Description and Applications
This new generation small-signal enhancement mode MOSFET
features low on-resistance and fast switching, making it ideal for high-
efficiency power management applications.
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Mechanical Data
Case: SC-59
Case Material - Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.014 grams (Approximate)
D
SC-59
D
G
G
S
Top View
S
Equivalent Circuit
Pin Configuration
Ordering Information
(Note 5)
Part Number
DMN3033LSNQ-7
DMN3033LSNQ-13
Notes:
Case
SC-59
SC-59
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
A5
A5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
…
…
Feb
2
2015
C
Mar
3
Apr
4
2016
D
May
5
YM
2017
E
Jun
6
2018
F
Jul
7
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov
N
2022
J
Dec
D
June 2015
DMN3033LSNQ
Document number: DS37997 Rev. 1 - 2
1 of 6
www.diodes.com
© Diodes Incorporated
DMN3033LSNQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 6) Continuous
Pulsed Drain Current (Note 7)
Body-Diode Continuous Current (Note 6)
Symbol
V
DSS
V
GSS
T
A
= +25°C
T
A
= +70°C
I
D
I
DM
I
S
Value
30
20
6
5
24
2.25
Unit
V
V
A
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6) t ≤10s
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
JA
T
J
, T
STG
Value
1.4
90
-55 to +150
Unit
W
°C /W
°C
6. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t
10s.
7. Repetitive Rating, pulse width limited by junction temperature.
Electrical Characteristics
Characteristic
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
Min
30
1.0
Typ
25
36
5
0.7
10.5
3.8
2.9
11
7
63
30
755
136
108
Max
1
5
100
2.1
30
40
1.1
Unit
V
µA
nA
V
mΩ
S
V
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Test Condition
I
D
= 250µA, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V
V
DS
= 0V, V
GS
=
20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 6A
V
GS
= 4.5V, I
D
= 5A
V
DS
= 10V, I
D
= 8A
I
S
= 2.25A, V
GS
= 0V
V
GS
= 5V, V
DS
= 15V, I
D
= 6A
V
GS
= 10V, V
DS
= 15V, I
D
= 6A
V
GS
= 10V, V
DS
= 15V, I
D
= 6A
V
DD
= 15V, V
GS
= 10V,
R
D
= 1.8Ω, R
G
= 6Ω
T
J
= 25°C
(Note 9) T
J
= 55°C
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
V
SD
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Note 8)
Diode Forward Voltage (Note 8)
DYNAMIC PARAMETERS (Note 9)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
8. Test pulse width t = 300ms.
9. Guaranteed by design. Not subject to production testing.
DMN3033LSNQ
Document number: DS37997 Rev. 1 - 2
2 of 6
www.diodes.com
June 2015
© Diodes Incorporated
DMN3033LSNQ
20
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
V
DS
= 5V
Pulsed
R
DS(on)
, STATIC DRAIN-SOURCE ON-RESISTANCE (
)
0.06
1,200
f = 1 MHz
V
GS
= 0V
0.05
1,000
C
T
, CAPACITANCE (pF)
800
C
iss
0.04
V
GS
= 4.5V
600
0.03
V
GS
= 10V
400
0.02
200
C
oss
C
rss
0.01
6
8 10 12 14 16 18 20
I
D
, DRAIN CURRENT (A)
Fig. 3
On-Resistance vs. Drain Current and Gate Voltage
0
2
4
0
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
30
2
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.5
V
GS
= 10V
I
D
= 6A
V
GS
= 4.5V
I
D
= 5A
1
0.5
0
-50
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (C)
Fig. 6 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
-25
DMN3033LSNQ
Document number: DS37997 Rev. 1 - 2
3 of 6
www.diodes.com
June 2015
© Diodes Incorporated
DMN3033LSNQ
DMN3033LSNQ
Document number: DS37997 Rev. 1 - 2
4 of 6
www.diodes.com
June 2015
© Diodes Incorporated
DMN3033LSNQ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
B C
G
H
K
M
N
J
D
L
SC-59
Dim
Min
Max
Typ
A
0.35
0.50
0.38
B
1.50
1.70
1.60
C
2.70
3.00
2.80
D
-
-
0.95
G
-
-
1.90
H
2.90
3.10
3.00
J
0.013 0.10
0.05
K
1.00
1.30
1.10
L
0.35
0.55
0.40
M
0.10
0.20
0.15
N
0.70
0.80
0.75
0°
8°
-
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
3.4
X
0.8
Y
1.0
C
2.4
E
1.35
X
E
DMN3033LSNQ
Document number: DS37997 Rev. 1 - 2
5 of 6
www.diodes.com
June 2015
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
