DMG6968U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
25mΩ @ V
GS
= 4.5V
29mΩ @ V
GS
= 2.5V
36mΩ @ V
GS
= 1.8V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
D
D
G
G
S
Gate Protection
Diode
S
ESD PROTECTED TO 2kV
Top View
Internal Schematic
Top View
Ordering Information
(Note 5)
Part Number
DMG6968U-7
DMG6968UQ-7
Notes:
Compliance
Standard
Automotive
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to https://www.diodes.com/quality/product-compliance-definitions/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
YM
2N4
2N4 = Product Type Marking Code
YM = Date Code Marking
Y or
Y
= Year (ex: E = 2017)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
….
…..
Feb
2
2017
E
Mar
3
2018
F
Apr
4
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
2022
J
Aug
8
2023
K
Sep
9
2024
L
Oct
O
2025
M
Nov
N
2026
N
Dec
D
DMG6968U
Document number: DS31738 Rev. 7 - 2
1 of 6
www.diodes.com
November 2017
© Diodes Incorporated
DMG6968U
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6)
Pulsed Drain Current
Steady
State
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
20
±12
6.5
5.2
30
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @ T
A
= +25°
C
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J,
T
STG
Value
1.3
157
-55 to +150
Unit
W
°
C/W
°
C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Breakdown Voltage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
T
J
= +25°
C
I
DSS
I
GSS
BV
SGS
V
GS(TH)
R
DS(ON)
|Y
fs
|
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
20
±12
0.5
Typ
—
21
23
28
8
151
91
32
8.5
1.6
2.8
54
66
613
205
Max
1.0
±10
—
0.9
25
29
36
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 10, R
G
= 6, I
D
= 1A
V
GS
= 4.5V, V
DS
= 10V, I
D
= 6.5A
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
mΩ
Unit
V
µA
µA
V
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 20V, V
GS
= 0V
V
GS
=
10V,
V
DS
= 0V
V
DS
= 0V, I
G
=
250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 6.5A
V
GS
= 2.5V, I
D
= 5.5A
V
GS
= 1.8V, I
D
= 3.5A
V
DS
= 10V, I
D
= 5A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal vias to bottom layer 1 inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG6968U
Document number: DS31738 Rev. 7 - 2
2 of 6
www.diodes.com
November 2017
© Diodes Incorporated
DMG6968U
20
V
GS
= 10V
V
GS
= 4.5V
20
V
DS
= 5V
16
16
V
GS
= 3.0V
V
GS
= 2.5V
12
V
GS
= 2.0V
V
GS
= 1.5V
8
4
)
A
(
T
N
E 12
R
R
U
C
N 8
I
A
R
D
,
D
I
4
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
5
0
0.5
1
1.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
2
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
0.04
0.03
V
GS
= 1.8V
V
GS
= 2.5V
V
GS
= 4.5V
0.02
)
(
E
C
N
A
T
S
I
S
E
R
-
N
O
E
C
R
U
O
S
-
N
I
A
R
D
,
)
N
R
0.06
0.05
V
GS
= 4.5V
0.04
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
0.03
0.02
T
A
= 25°
C
T
A
= -55°
C
0.01
0
0
4
8
12
16
I
D
, DRAIN CURRENT (A)
20
0.01
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
O
(
S
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0.06
1.6
R
DSON
, DRAIN-SOURCE
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
ON-RESISTANCE (NORMALIZED)
R
DSON
, DRAIN-SOURCE
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE ()
ON-RESISTANCE (
)
1.4
V
GS
= 2.5V
I
D
= 5.5A
0.05
1.2
V
GS
= 4.5V
I
D
= 6.5A
0.04
V
GS
= 2.5V
I
D
= 5.5A
0.03
1.0
V
GS
= 4.5V
I
D
= 6.5A
0.02
0.8
0.01
0.6
-50
-25
0
25
50
75 100 125 150
(°
C)
T
A
, AMBIENT TEMPERATURE (癈 )
0
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE
(°
)
(癈
C)
Fig. 5 On-Resistance Variation with Temperature
Fig. 6 On-Resistance Variation with Temperature
DMG6968U
Document number: DS31738 Rev. 7 - 2
3 of 6
www.diodes.com
November 2017
© Diodes Incorporated
DMG6968U
1.4
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
)
V
(
E
G
A
T
L
O
V
D
L
O
H
S
E
R
H
T
E
T
A
G
,
)
H
V
1.2
1.0
0.8
0.6
0.4
0.2
0
-50 -25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°
C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
500
450
I
D
= 1mA
I
D
= 250µA
20
T
(
S
G
16
)
A
(
T
N
E
R 12
R
U
C
E
C
R 8
U
O
S
,
S
I
4
I
S
, SOURCE CURRENT (A)
T
A
= 25°
C
0
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
100,000
f = 1MHz
400
C, CAPACITANCE (pF)
I
DSS
, LEAKAGE CURRENT (nA)
350
300
250
200
150
100
50
0
0
4
C
rss
C
iss
)
A 10,000
n
(
T
N
E
R
R
1,000
U
C
E
G
A
K
100
A
E
L
,
S
I
S
D
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
C
oss
10
T
A
= -55°
C
T
A
= 25°
C
1
20
8
12
16
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
0
2
4
6
8 10 12 14 16 18 20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
JA
(t) = r(t) * R
JA
R
JA
=
162°
/W
162癈
C/W
P(pk)
D = 0.02
0.01
D = 0.01
D = 0.005
t
1
D = Single Pulse
t
2
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
10
100
1,000
DMG6968U
Document number: DS31738 Rev. 7 - 2
4 of 6
www.diodes.com
November 2017
© Diodes Incorporated
DMG6968U
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
All 7°
GAUGE PLANE
0.25
H
J
K1
K
a
A
M
L
L1
C
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
0°
8°
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Y
Y1
C
Dimensions
C
X
X1
Y
Y1
Value (in mm)
2.0
0.8
1.35
0.9
2.9
X
X1
DMG6968U
Document number: DS31738 Rev. 7 - 2
5 of 6
www.diodes.com
November 2017
© Diodes Incorporated
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