DMT6008LFG
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
60V
R
DS(ON)
max
7.5mΩ @ V
GS
= 10V
11.5mΩ @ V
GS
= 4.5V
I
D
max
T
C
= +25°C
60A
49A
Features and Benefits
•
•
•
•
•
•
•
•
•
•
Low R
DS(ON)
– Ensures on State Losses Are Minimized
Excellent Q
gd
x R
DS (ON)
Product (FOM)
Advanced Technology for DC/DC Converts
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
100% UIS (Avalanche) rated
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
•
•
•
•
Synchronous Rectifier
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
•
•
•
•
•
•
S
Pin 1
S
S
G
Case: POWERDI 3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
⎯
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.008 grams (approximate)
®
D
G
D
ESD PROTECTED
D
D
D
Bottom View
Top View
Internal Schematic
Gate Protection
Diode
S
Ordering Information
(Note 4)
Part Number
DMT6008LFG-7
DMT6008LFG-13
Notes:
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
S6E = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
DMT6008LFG
Document number: DS36680 Rev. 2 - 2
1 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMT6008LFG
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
T
C
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AS
E
AS
Value
60
±12
13
11
60
48
3
80
13
25
Units
V
V
A
A
A
A
A
mJ
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
Continuous Drain Current (Note 5) V
GS
= 10V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current (Note 6)
Avalanche Energy (Note 6)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
T
A
= +25°C
T
C
= +25°C
Steady State
t<10s
Symbol
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
2.2
41
58
35
3
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
60
—
—
0.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
5.0
6.5
19
0.9
2713
822
57
0.54
22.4
50.4
9.6
7.8
7.0
4.4
24.4
7.0
Max
—
1
±10
2.0
7.5
11.5
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
μA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 1mA
V
DS
= 48V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 20A
V
GS
= 3V, I
D
= 3A
V
GS
= 0V, I
S
= 20A
pF
Ω
V
DS
= 30V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
nC
V
DS
= 30V, I
D
= 20A
nS
V
DD
= 30V, V
GS
= 10V,
I
D
= 20A, R
G
= 3Ω,
5. R
ΘJA
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R
θJC
is guaranteed by design
while R
ΘJA
is determined by the user’s board design.
6 .UIS in production with L = 0.3mH, T
J
= +25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMT6008LFG
Document number: DS36680 Rev. 2 - 2
2 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMT6008LFG
30.0
30
V
DS
= 5.0V
25.0
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.5V
25
I
D
, DRAIN CURRENT (A)
20.0
20
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
15.0
15
V
GS
= 3.0V
10.0
10
5.0
V
GS
= 2.5V
5
0.0
0.00
0.50
1.00
1.50
2.00
2.50
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3.00
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
V
GS
= 3.0V
0.1
0.01
V
GS
= 10V
V
GS
= 4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.0
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
I
D
= 3.0A
I
D
= 20A
0.001
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
= 4.5V
30
2
3
4
5
6
7
8
9 10 11
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
12
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
2
V
GS
= 10V
I
D
= 10A
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
1.6
V
GS
= 4.5V
I
D
= 5A
1.2
T
A
= 25°C
T
A
= -55°C
0.8
0
10
15
20
25
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
5
30
0.4
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
DMT6008LFG
Document number: DS36680 Rev. 2 - 2
3 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMT6008LFG
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.014
2.4
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
2.2
2
1.8
1.6
1.4
1.2
1
0.8
-50
I
D
= 250µA
I
D
= 1mA
0.012
0.01
0.008
0.006
0.004
0.002
0
-50
V
GS
= 10V
I
D
= 10A
V
GS
= 4.5V
I
D
= 5A
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
1000
R
DS(on)
Limited
30
25
I
S
, SOURCE CURRENT (A)
-I
D
, DRAIN CURRENT (A)
100
P
W
= 100µs
20
10
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
15
1
10
0.1
T
A
= 150°C
T
A
= 85°C
T
A
= 125°C
5
T
A
= 25°C
T
A
= -55°C
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
0.001
0.01
T
J(max)
= 150°C
0.01
T
A
= 25°C
V
GS
= 4.5V
Single Pulse
DUT on 1 * MRP Board
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 SOA, Safe Operation Area
100
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
D = Single Pulse
0.001
0.0001
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 122°C/W
Duty Cycle, D = t1/ t2
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
100
1000
0.001
DMT6008LFG
Document number: DS36680 Rev. 2 - 2
4 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMT6008LFG
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
POWERDI 3333-8
Dim Min Max Typ
D
3.25 3.35 3.30
E
3.25 3.35 3.30
D2
2.22 2.32 2.27
E2
1.56 1.66 1.61
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.203
−
−
b
0.27 0.37 0.32
b2
0.20
−
−
L
0.35 0.45 0.40
L1
0.39
−
−
e
0.65
−
−
Z
0.515
−
−
All Dimensions in mm
®
A
A1
A3
D
D2
L
(4x)
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
Pin 1 ID
E
E2
1
4
b2
(4x)
8
5
L1
(3x)
Z (4x)
e
b (8x)
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
G
Y2
8
G1
5
Y1
Y
1
Y3
X2
C
4
Dimensions
C
G
G1
Y
Y1
Y2
Y3
X
X2
Value (in mm)
0.650
0.230
0.420
3.700
2.250
1.850
0.700
2.370
0.420
DMT6008LFG
Document number: DS36680 Rev. 2 - 2
5 of 6
www.diodes.com
July 2014
© Diodes Incorporated
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