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DMG4822SSD-13

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 10A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 20mΩ @ 8.5A, 10V Maximum power dissipation (Ta =25°C): 1.42W Type: Dual N-channel 2 N-channel, 30V, 10A, 31mΩ@4.5V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size246KB,7 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

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DMG4822SSD-13 Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 10A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 20mΩ @ 8.5A, 10V Maximum power dissipation (Ta =25°C): 1.42W Type: Dual N-channel 2 N-channel, 30V, 10A, 31mΩ@4.5V

DMG4822SSD-13 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C10A
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance20mΩ @ 8.5A,10V
Maximum power dissipation (Ta=25°C)1.42W
typeDual N-channel
DMG4822SSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
30V
R
DS(ON)
max
20mΩ @ V
GS
= 10V
I
D
max
T
A
= +25°C
10A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Low Input/Output leakage
Low Gate Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
NEW PRODUCT
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
Applications
General Purpose Interfacing Switch
Power Management Functions
DC-DC Converters
Analog Switch
D1
S1
G1
S2
G2
TOP VIEW
Internal Schematic
D2
D1
D1
D2
D2
G1
S1
N-Channel MOSFET
G2
S2
N-Channel MOSFET
Ordering Information
(Note 4)
Part Number
DMG4822SSD-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
G4822SD
YY WW
1
4
1
G4822SD
YY WW
4
= Manufacturer’s Marking
G4822SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Chengdu A/T Site
Shanghai A/T Site
DMG4822SSD
Document number: DS35403 Rev. 2 - 2
1 of 7
www.diodes.com
February 2014
© Diodes Incorporated
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