This product specification is applied to Chip Monolithic Ceramic Capacitor used for General Electronic equipment.Do not use these products in any automotive power
train or safety equipment including battery chargers for electric vehicles and plugin hybrids.
2.MURATA Part NO. System
(Ex.)
GRM
31
(1)L/W
Dimensions
B
(2)T
Dimensions
R7
(3)Temperature
Characteristics
2J
(4)Rated
Voltage
682
(5)Nominal
Capacitance
K
(6)Capacitance
Tolerance
W01
(7)Murata’s Control
Code
L
(8)Packaging Code
3. Type & Dimensions
(1)-1 L
3.2±0.2
(1)-2 W
1.6±0.2
(2) T
1.25+0/-0.3
e
0.3 min.
(Unit:mm)
g
1.2 min.
4.Rated value
(3) Temperature Characteristics
(Public STD Code):X7R(EIA)
Temp. coeff
Temp. Range
or Cap. Change
(Ref.Temp.)
(4)
Rated
Voltage
(6)
(5) Nominal
Capacitance
Capacitance
Tolerance
Specifications and Test
Methods
(Operating
Temp. Range)
-15 to 15 %
・Soldering
Method
Flow / Reflow
-55 to 125 °C
(25 °C)
DC 630 V
6800 pF
±10 %
-55 to 125 °C
5.Package
mark
L
K
(8) Packaging
f180mm
Reel
EMBOSSED W8P4
f330mm
Reel
EMBOSSED W8P4
Packaging Unit
3000 pcs./Reel
10000 pcs./Reel
Product specifications in this catalog are as of Sep.14,2016,and are subject to change or obsolescence without notice.
Please consult the approval sheet before ordering.
Please read rating and !Cautions first.
GRM31BR72J682KW01-01
1
■
Specifications and Test Methods
No
1
2
3
Appearance
Dimension
Voltage proof
Item
Specification
No defects or abnormalities.
Within the specified dimensions.
No defects or abnormalities.
Visual inspection.
Using calipers and micrometers.
Measurement Point :
Test Voltage
:
Applied Time
:
Between the terminations
DC945V(150% of the rated voltage)
1 to 5 s
Test Method
(Ref. Standard:JIS C 5101, IEC60384）
Charge/discharge current : 50mA max.
4
Insulation Resistance(I.R.)
C
≥0.01µF
: 100 MΩ
∙
µF or more
C < 0.01µF : 10000 MΩ or more
Measurement Point
:
Measurement Voltage :
Charging Time
:
Between the terminations
DC500+/-50V
60+/-5s
Charge/discharge current : 50mA max.
Measurement Temperature: Room Temperature
5
6
7
Capacitance
Dissipation Factor (D.F.)
Temperature
Characteristics
of Capacitance
Shown in Rated value.
0.025 max.
R7 : Within +/-15%
(-55°C to +125°C)
Measurement Temperature: Room Temperature
Measurement Frequency
Measurement Voltage
: 1.0+/-0.1kHz
:AC1.0+/-0.2V(r.m.s.)
The capacitance change should be measured after 5 min.
at each specified temp. stage.
Capacitance value as a reference is the value in step 3.
Step
1
2
3
4
5
Temperature(C)
Reference Temp.+/-2
Min.Operating Temp. +/-3
Reference Temp. +/-2
Max.Operating Temp. +/-3
Reference Temp. +/-2
Ste
Temp
½Pretreatment
Perform a heat treatment at 150+0/-10°C for 1h+/-5min and then
let sit for 24+/-2h at room condition*.
8
Vibration
Appearance
Capacitance
No defects or abnormalities.
Within the specified initial value.
Solder the capacitor on the test substrate A shown in "Complement of Test
method”.
Kind of Vibration
Total amplitude
D.F.
Within the specified initial value.
:
:
A simple harmonic motion
10Hz to 55Hz to 10Hz (1min)
1.5mm
This motion should be applied for a period of 2h in each 3 mutually
perpendicular directions(total of 6h).
9
Solderability
95% of the terminations is to be soldered evenly and
continuously.
Test Method
Preheat
Solder
Solder Temp.
Immersion time
:
:
:
:
:
Solder bath method
Solution of rosin ethanol 25(wt)%
80℃ to 120℃ for 10s to 30s
Sn-3.0Ag-0.5Cu (Lead Free Solder)
245+/-5℃
2+/-0.5s
25+/-2.5mm/s.
Solder bath method
Sn-3.0Ag-0.5Cu (Lead Free Solder)
:
:
:
:
260+/-5℃
10+/-1s
25+/-2.5mm/s.
24+/-2h at room condition*.
GRM/GR6/GBM/GB6 31 size max.:
120℃ to 150℃ for 1 min
GRM/GR6/GBM/GB6 32 size min.:
100℃ to 120℃ for 1 min
and 170℃ to 200℃ for 1 min
Voltage proof No defects.
½Pretreatment
Perform a heat treatment at 150+0/-10°C for 1h+/-5min and then
let sit for 24+/-2h at room condition*.
*Room Condition : Temperature:15 to 35°C, Relative humidity:45 to 75%, Atmosphere pressure:86 to 106kPa
Flux :
Immersing in speed :
10 Resistance
to
Soldering
Heat
Capacitance
Change
D.F.
Within the specified initial value.
Within +/-10%
Appearance
No defects or abnormalities.
Test Method
Solder
Solder Temp.
Immersion time
Exposure Time
Preheat
I.R.
Within the specified initial value.
:
:
Immersing in speed :
JEMCGS-03073B
2
No
Item
Specification
No removal of the terminations or other defect
should occur.
Test Method
(Ref. Standard:JIS C 5101, IEC60384）
Solder the capacitor on the test substrate A shown in "Complement of Test
method”.
11 Adhesive Strength
of Termination
10N, 10+/-1s
Applied Direction : In parallel with the test substrate and vertical with the
capacitor side.
12 Substrate
Bending test
No defects or abnormalities.
Solder the capacitor on the test substrate B shown in "Complement of Test
method”.
Then apply the force in the direction shown in “Test Method of Substrate
Bending test” of “Complement of Test method”.
Flexure
Holding Time
Soldering Method
13 Temperature
Sudden Change
Capacitance
Change
Step
1
Temp.(C)
Min.Operating Temp.+0/-3
Room Temp
Max.Operating Temp.+3/-0
Room Temp
:
:
:
1mm
5+/-1s
Reflow soldering
Appearance
No defects or abnormalities.
Fix the capacitor to the supporting Test substrate A (glass epoxy board)
shown in “Complement of Test method”.
Perform the 5 cycles according to the four heat treatments
Within +/-7.5%
shown in the following table.
Time
(min)
30+/-3
2 to 3
30+/-3
2 to 3
D.F.
Within the specified initial value.
2
3
I.R.
Within the specified initial value.
4
Exposure Time
Voltage proof No defects.
:
24+/-2h at room condition*.
½Pretreatment
Perform a heat treatment at 150+0/-10°C for 1h+/-5min and then
let sit for 24+/-2h at room condition*.
14 High
Temperature
High Humidity
(Steady)
Appearance
Capacitance
Change
D.F.
I.R.
No defects or abnormalities.
Within +/-15%
Fix the capacitor to the supporting Test substrate A (glass epoxy board)
shown in “Complement of Test method”.
Test Temperature
Test Humidity
Test Time
:
:
:
:
:
40+/-2℃
90% to 95%RH
500+24/-0h
DC630V(DC Rated Voltage)
24+/-2h at room condition*.
0.05 max.
C
≥0.01µF
: 10 MΩ
∙
µF or more
C < 0.01µF : 1000 MΩ or more
Applied Voltage
Exposure Time
½Pretreatment
Apply test voltage for 1h+/-5min at test temperature.
Remove and let sit for 24+/-2h at room condition*.
Voltage proof No defects.
15 Durability
Appearance
No defects or abnormalities.
Fix the capacitor to the supporting Test substrate A (glass epoxy board)
shown in “Complement of Test method”.
Test Temperature
:
:
:
:
Max. Operating Temp. +/-3℃
1000+48/-0h
DC756V(120% of the rated voltage)
24+/-2h at room condition*.
Capacitance
Change
Within +/-15%
Test Time
Applied Voltage
Exposure Time
Charge/discharge current : 50mA max.
D.F.
0.05 max.
½Pretreatment
Apply test voltage for 1h+/-5min at test temperature.
I.R.
C
≥0.01µF
: 10 MΩ
∙
µF or more
C < 0.01µF : 1000 MΩ or more
Remove and let sit for 24+/-2h at room condition*.
Voltage proof No defects.
*Room Condition : Temperature:15 to 35°C, Relative humidity:45 to 75%, Atmosphere pressure:86 to 106kPa
JEMCGS-03073B
3
Complement of Test Method
1.Test substrate
The test substrate should be Substrate A or Substrate B as described in “Specifications and Test methods”.
The specimen should be soldered by the conditions as described below.
Soldering Method : Reflow soldering
Solder : Sn-3.0Ag-0.5Cu
(1) Test Substrate A
½Land
Dimensions
Chip Capacitor
Land
Type
GRM/GR6/GBM/GB6 18
GRM/GR6/GBM/GB6 21
GRM/GR6/GBM/GB6 31
GRM/GR6/GBM/GB6 32
GRM/GR6/GBM/GB6 42
GRM/GR6/GBM/GB6 43
GRM/GR6/GBM/GB6 52
GRM/GR6/GBM/GB6 55
b
½Material
a
Solder Resist
a
1.0
1.2
2.2
2.2
3.5
3.5
4.5
4.5
Dimension (mm)
b
c
3.0
1.2
4.0
1.65
5.0
2.0
5.0
2.9
7.0
2.4
7.0
3.7
8.0
3.2
8.0
5.6
c
: Glass Epoxy Board
½Thickness
: 1.6mm
½Thickness
of copper foil : 0.035mm
(1) Test Substrate B
a
Type
GRM/GR6/GBM/GB6 18
GRM/GR6/GBM/GB6 21
GRM/GR6/GBM/GB6 31
GRM/GR6/GBM/GB6 32
GRM/GR6/GBM/GB6 42
GRM/GR6/GBM/GB6 43
GRM/GR6/GBM/GB6 52
GRM/GR6/GBM/GB6 55
(unit : mm)
d
c
(f4.5)
b
100
1.6
Copper foil
Solder resist
½Material
: Glass Epoxy Board
½Thickness
of copper foil : 0.035mm
2. Test Method of Substrate Bending test
a) Support state
(b) Test state
Dimension of pettern (mm)
a
b
c
d
1.0
3.0
1.2
1.0
1.2
4.0
1.65
1.0
2.2
5.0
2.0
1.0
2.2
5.0
2.9
1.0
3.5
7.0
2.4
1.0
3.5
7.0
3.7
1.0
4.5
8.0
3.2
1.0
4.5
8.0
5.6
1.0
40
Test
Substrate
B
20
50 min.
b
Test Substrate B
a
Capacitor
Support stand(f5)
45+/-2
45+/-2
Test stand
Support stand
Pressure stick
(unit : mm)
a:+/-2 gap between support stand center and test stand
·Material of Test stand and pressure stick
b:+/-5
gap between support stand center and test stand center
The
material shoud be a metal where a remarkable transformation and the distortion are not caused even if it is pressurized.
·Pressurizing speed
The
pressurizing speed is pressurized at the speed of about 1mm/s until the flexure reaches a regulated value.
Pressure stick
F
Capacitor
R5
L
45
45
Support
Support
stand
JEMCGS-03073B
4
Package
(1) Appearance of taping
(a) Paper Tape
Bottom Tape (Thickness: Around 50m) is attached below Base Tape with sprocket and put Top Tape
(Thickness: Around 50m) on capacitor.
(b) Plastic Tape
Cover Tape (Thickness: Around 60m) is put on capacitor on Base Tape (Blister carrier Tape).
(c) The sprocket holes are to the right as the Tape is pulled toward the user.
(2) Packed chips
Capacitor
(3) Dimensions of Tape
(a) Type A (Dimensions of chip : Apply to 1.6x0.8 , 2.0x1.25 , 3.2x1.6 , 3.2x2.5)
1.75±0.1
f
1.5+0.1/-0
4.0±0.1
4.0±0.1
(Plastic Tape)
0.25±0.1
3.5±0.05
(Paper Tape)
2.0±0.05
8.0±0.3
B
A
2.5max.
1.1max.
(Unit : mm)
Dimensions of chip
[L×W]
1.6×0.8
2.0×1.25
3.2×1.6
3.2×2.5
A*
1.05
1.45
2.0
2.9
B*
1.85
2.25
3.6
3.6
Dimensions
of A,B : Nominal value
(b) Type B (Dimensions of chip : Apply to 4.5x2.0)
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Embedded System
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