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BUK9Y41-80E,115

Description
Drain-source voltage (Vdss): 80V Continuous drain current (Id) (at 25°C): 24A (Tc) Gate-source threshold voltage: 2.1V @ 1mA Drain-source on-resistance: 41mΩ @ 5A, 10V Maximum power consumption Dispersion (Ta=25°C): 64W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size760KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

BUK9Y41-80E,115 Overview

Drain-source voltage (Vdss): 80V Continuous drain current (Id) (at 25°C): 24A (Tc) Gate-source threshold voltage: 2.1V @ 1mA Drain-source on-resistance: 41mΩ @ 5A, 10V Maximum power consumption Dispersion (Ta=25°C): 64W(Tc) Type: N-channel

BUK9Y41-80E,115 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)80V
Continuous drain current (Id) at 25°C24A(Tc)
Gate-source threshold voltage2.1V @ 1mA
Drain-source on-resistance41mΩ @ 5A,10V
Maximum power dissipation (Ta=25°C)64W(Tc)
typeN channel
BUK9Y41-80E
8 May 2013
N-channel 80 V, 45 mΩ logic level MOSFET in LFPAK56
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 5 V; I
D
= 5 A; T
j
= 25 °C;
Fig. 11
Min
-
-
-
Typ
-
-
-
Max
80
24
64
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
35.7
45
Dynamic characteristics
Q
GD
V
GS
= 5 V; I
D
= 5 A; V
DS
= 64 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
4.3
-
nC
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