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BUK9Y25-60E,115

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 34A (Tc) Gate-source threshold voltage: 2.1V @ 1mA Drain-source on-resistance: 21.5mΩ @ 10A, 10V Maximum power Dissipation (Ta=25°C): 65W (Tc) Type: N-channel N-channel, 60V, 34A, 25mΩ@5V
CategoryDiscrete semiconductor    The transistor   
File Size735KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric Compare View All

BUK9Y25-60E,115 Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 34A (Tc) Gate-source threshold voltage: 2.1V @ 1mA Drain-source on-resistance: 21.5mΩ @ 10A, 10V Maximum power Dissipation (Ta=25°C): 65W (Tc) Type: N-channel N-channel, 60V, 34A, 25mΩ@5V

BUK9Y25-60E,115 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PSSO-G4
Contacts4
Manufacturer packaging codeSOT669
Reach Compliance Codenot_compliant
Factory Lead Time26 weeks
Samacsys DescriptionMOSFET N-channel 60 V 25 mo FET
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)23.6 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)34 A
Maximum drain-source on-resistance0.025 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-235
JESD-30 codeR-PSSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)135 A
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK9Y25-60E
7 May 2013
N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 5 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 11
Min
-
-
-
Typ
-
-
-
Max
60
34
65
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
20.8
25
Dynamic characteristics
Q
GD
V
GS
= 5 V; I
D
= 10 A; V
DS
= 48 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
4.2
-
nC

BUK9Y25-60E,115 Related Products

BUK9Y25-60E,115 934067023115
Description Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 34A (Tc) Gate-source threshold voltage: 2.1V @ 1mA Drain-source on-resistance: 21.5mΩ @ 10A, 10V Maximum power Dissipation (Ta=25°C): 65W (Tc) Type: N-channel N-channel, 60V, 34A, 25mΩ@5V MOSFET N-CH 60V 34A LFPAK
package instruction SMALL OUTLINE, R-PSSO-G4 SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code not_compliant compliant
Other features AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 23.6 mJ 23.6 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (ID) 34 A 34 A
Maximum drain-source on-resistance 0.025 Ω 0.025 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code MO-235 MO-235
JESD-30 code R-PSSO-G4 R-PSSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 135 A 135 A
Guideline AEC-Q101; IEC-60134 AEC-Q101; IEC-60134
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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