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BCP55,115

CategoryDiscrete semiconductor    The transistor   
File Size2MB,22 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

BCP55,115 Parametric

Parameter NameAttribute value
Brand NameNexperia
Parts packaging codeSC-73
Contacts4
Manufacturer packaging codeSOT223
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment1.5 W
Certification statusNot Qualified
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
Base Number Matches1
BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
Rev. 8 — 24 October 2011
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
Nexperia
BCP55
BCX55
BC55PA
[1]
Type number
[1]
PNP complement
JEITA
SC-73
SC-62
-
JEDEC
-
TO-243
-
BCP52
BCX52
BC52PA
SOT223
SOT89
SOT1061
Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Low-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
[1]
Pulse test: t
p
300
s; 
= 0.02.
Conditions
open base
single pulse; t
p
1 ms
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
[1]
[1]
[1]
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
60
1
2
250
160
250
Unit
V
A
A

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