BUK7Y3R5-40H
8 May 2018
N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56
Product data sheet
1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction
technology, housed in a robust LFPAK56 package. This product has been fully designed and
qualified to meet AEC-Q101 requirements delivering high performance and endurance.
2. Features and benefits
•
•
Fully automotive qualified to AEC-Q101:
•
175 °C rating suitable for thermally demanding environments
Trench 9 Superjunction technology:
•
Reduced cell pitch enables enhanced power density and efficiency with lower R
DSon
in
same footprint
•
Improved SOA and avalanche capability compared to standard TrenchMOS
•
Tight V
GS(th)
limits enable easy paralleling of MOSFETs
LFPAK Gull Wing leads:
•
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike
traditional QFN packages
•
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
•
Easy solder wetting for good mechanical solder joint
LFPAK copper clip technology:
•
•
Improved reliability, with reduced R
th
and R
DSon
Increases maximum current capability and improved current spreading
•
•
3. Applications
•
•
•
•
•
12 V automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DS
I
D
P
tot
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
25 °C ≤ T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
[1]
Min
-
-
-
Typ
-
-
-
Max
40
120
115
Unit
V
A
W
Nexperia
BUK7Y3R5-40H
N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56
Symbol
R
DSon
Parameter
drain-source on-state
resistance
gate-drain charge
Conditions
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
I
D
= 25 A; V
DS
= 32 V; V
GS
= 10 V;
Fig. 13; Fig. 14
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 20 V;
Fig. 17
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 20 V; T
j
= 25 °C
Min
2
Typ
2.9
Max
3.5
Unit
mΩ
Static characteristics
Dynamic characteristics
Q
GD
-
6
15
nC
Source-drain diode
Q
r
S
[1]
recovered charge
softness factor
-
-
16
0.8
-
-
nC
120A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
4
mb
Symbol Description
S
S
S
G
D
source
source
source
gate
mounting base; connected to
drain
1 2 3 4
Simplified outline
mb
Graphic symbol
D
G
mbb076
S
LFPAK56; Power-
SO8 (SOT669)
6. Ordering information
Table 3. Ordering information
Type number
BUK7Y3R5-40H
Package
Name
LFPAK56;
Power-SO8
Description
plastic, single-ended surface-mounted package; 4 terminals
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
BUK7Y3R5-40H
Marking code
73H540
BUK7Y3R5-40H
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
8 May 2018
2 / 14
Nexperia
BUK7Y3R5-40H
N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
P
tot
I
D
I
DM
T
stg
T
j
I
S
I
SM
E
DS(AL)S
Parameter
drain-source voltage
gate-source voltage
total power dissipation
drain current
peak drain current
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-
source avalanche
energy
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
I
D
= 120 A; V
sup
≤ 40 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped;
Fig. 4
[2] [3]
[1]
Conditions
25 °C ≤ T
j
≤ 175 °C
DC; T
j
≤ 175 °C
T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; T
mb
= 100 °C;
Fig. 2
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C;
Fig. 3
[1]
[1]
Min
-
-10
-
-
-
-
-55
-55
-
-
-
Max
40
20
115
120
93
526
175
175
120
526
45
Unit
V
V
W
A
A
A
°C
°C
A
A
mJ
Source-drain diode
Avalanche ruggedness
[1]
[2]
[3]
120A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
120
P
der
(%)
80
03na19
I
D
(A)
125
(1)
150
aaa-026228
100
75
40
50
25
0
0
50
100
150
T
mb
(°C)
200
0
0
25
50
75
100
125
150 175
T
mb
(°C)
200
Fig. 1.
Normalized total power dissipation as a
function of mounting base temperature
Fig. 2.
V
GS
≥ 10 V
(1) 120A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Continuous drain current as a function of
mounting base temperature
BUK7Y3R5-40H
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
8 May 2018
3 / 14
Nexperia
BUK7Y3R5-40H
N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56
I
D
(A)
10
3
Limit R
DSon
= V
DS
/ I
D
10
2
aaa-026230
t
p
= 10 us
100 us
10
DC
1
1 ms
10 ms
100 ms
10
-1
10
-1
1
10
V
DS
(V)
10
2
T
mb
= 25 °C; I
DM
is a single pulse
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
I
AL
(A)
10
3
aaa-026229
10
2
(1)
10
(2)
1
(3)
10
-1
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
(1) T
j (init)
= 25 °C; (2) T
j (init)
= 150 °C; (3) Repetitive Avalanche
Fig. 4.
Avalanche rating; avalanche current as a function of avalanche time
BUK7Y3R5-40H
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
8 May 2018
4 / 14
Nexperia
BUK7Y3R5-40H
N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-mb)
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min
-
Typ
1.18
Max
1.3
Unit
K/W
Z
th(j-mb)
(K/W)
10
aaa-026231
1
δ = 0.5
0.2
10
-1
0.1
0.05
0.02
single shot
P
δ=
t
p
T
10
-2
t
p
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
T
t
p
(s)
1
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
V
(BR)DSS
Parameter
drain-source
breakdown voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -40 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
V
GS(th)
gate-source threshold
voltage
I
D
= 1 mA; V
DS
=V
GS
; T
j
= 25 °C;
Fig. 9;
Fig. 10
I
D
= 1 mA; V
DS
=V
GS
; T
j
= -55 °C;
Fig. 9
I
D
= 1 mA; V
DS
=V
GS
; T
j
= 175 °C;
Fig. 9
I
DSS
drain leakage current
V
DS
= 40 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 16 V; V
GS
= 0 V; T
j
= 125 °C
V
DS
= 40 V; V
GS
= 0 V; T
j
= 175 °C
I
GSS
gate leakage current
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
Min
40
-
36
2.4
-
1
-
-
-
-
-
Typ
42.7
40.1
39.7
3
-
-
0.03
1
37
2
2
Max
-
-
-
3.6
4.3
-
1
10
500
100
100
Unit
V
V
V
V
V
V
µA
µA
µA
nA
nA
Static characteristics
BUK7Y3R5-40H
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
8 May 2018
5 / 14
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