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MURA205T3G

Description
DC reverse withstand voltage (Vr): 50V Average rectified current (Io): 2A Forward voltage drop (Vf): 940mV @ 2A Reverse recovery time (trr): 30ns
CategoryDiscrete semiconductor    diode   
File Size98KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MURA205T3G Overview

DC reverse withstand voltage (Vr): 50V Average rectified current (Io): 2A Forward voltage drop (Vf): 940mV @ 2A Reverse recovery time (trr): 30ns

MURA205T3G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
package instructionSMA, 2 PIN
Contacts2
Manufacturer packaging code403D-02
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time6 weeks
Other featuresFREE WHEELING DIODE
applicationGENERAL PURPOSE
Minimum breakdown voltage50 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.94 V
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage50 V
Maximum reverse current2 µA
Maximum reverse recovery time30 µs
Reverse test voltage50 V
surface mountYES
Terminal surfaceTin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature40
Base Number Matches1
MURA205, SURA8205,
MURA210, NRVUA210V,
SURA8210,
Surface Mount
Ultrafast Power Rectifiers
Ideally suited for high voltage, high frequency rectification, or as
free wheeling and protection diodes in surface mount applications
where compact size and weight are critical to the system.
Features
www.onsemi.com
ULTRAFAST RECTIFIERS
2 AMPERES, 50−100 VOLTS
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
High Temperature Glass Passivated Junction
Low Forward Voltage Drop (0.74 V Max @ 2.0 A, T
J
= 150°C)
NRVUA and SURA8 Prefixes for Automotive and Other
Applications Requiring Unique Site and Control Change
Requirements; AEC−Q101 Qualified and PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
SMA
CASE 403D
MARKING DIAGRAM
U5x
AYWW
G
Case: Epoxy, Molded
Weight: 70 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Polarity Band Indicates Cathode Lead
ESD Protection:
Human Body Model > 4000 V (Class 3)
Machine Model > 400 V (Class C)
U5x = Device Code
x = A for MURA205
= B for MURA210
A
= Assembly Location**
Y
= Year
WW = Work Week
G
= Pb−Free Package
** The Assembly Location Code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter
pin), the front side assembly code may be blank.
ORDERING INFORMATION
Device
MURA205T3G
SURA8205T3G*
MURA210T3G
NRVUA210VT3G*
SURA8210T3G*
Package
SMA
(Pb−Free)
SMA
(Pb−Free)
SMA
(Pb−Free)
SMA
(Pb−Free)
SMA
(Pb−Free)
Shipping
5,000 / Tape & Reel
5,000 / Tape & Reel
5,000 / Tape & Reel
5,000 / Tape & Reel
5,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
May, 2017
Rev. 7
1
Publication Order Number:
MURA205T3/D

MURA205T3G Related Products

MURA205T3G MURA205T3_06 NRVUA210VT3G MURA210T3G
Description DC reverse withstand voltage (Vr): 50V Average rectified current (Io): 2A Forward voltage drop (Vf): 940mV @ 2A Reverse recovery time (trr): 30ns ULTRAFAST RECTIFIERS 2 AMPERES, 50−100 VOLTS DIODE GEN PURP 100V 2A SMA Reverse recovery time (trr): 30ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 2A Forward voltage drop (Vf): 940mV @ 2A
Brand Name ON Semiconductor - ON Semiconductor ON Semiconductor
Is it lead-free? Lead free - Lead free Lead free
package instruction SMA, 2 PIN - SMA,2 PIN R-PDSO-C2
Manufacturer packaging code 403D-02 - 403D-02 403D-02
Reach Compliance Code not_compliant - not_compliant not_compliant
Factory Lead Time 6 weeks - 1 week 1 week
Other features FREE WHEELING DIODE - FREE WHEELING DIODE FREE WHEELING DIODE
application GENERAL PURPOSE - HIGH VOLTAGE ULTRA FAST RECOVERY POWER GENERAL PURPOSE
Configuration SINGLE - SINGLE SINGLE
Diode component materials SILICON - SILICON SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.94 V - 0.94 V 0.94 V
JESD-30 code R-PDSO-C2 - R-PDSO-J2 R-PDSO-C2
JESD-609 code e3 - e3 e3
Humidity sensitivity level 1 - 1 1
Maximum non-repetitive peak forward current 50 A - 50 A 50 A
Number of components 1 - 1 1
Phase 1 - 1 1
Number of terminals 2 - 2 2
Maximum operating temperature 175 °C - 175 °C 175 °C
Minimum operating temperature -65 °C - -65 °C -65 °C
Maximum output current 2 A - 2 A 2 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Guideline AEC-Q101 - AEC-Q101 AEC-Q101
Maximum repetitive peak reverse voltage 50 V - 100 V 100 V
Maximum reverse current 2 µA - 2 µA 2 µA
Maximum reverse recovery time 30 µs - 0.03 µs 30 µs
surface mount YES - YES YES
Terminal surface Tin (Sn) - Tin (Sn) Tin (Sn)
Terminal form C BEND - J BEND C BEND
Terminal location DUAL - DUAL DUAL
Base Number Matches 1 - 1 1
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