NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1025HDB
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V
(BR)DSS
250V
R
DS(ON)
460mΩ
I
D
10A
D
G
S
1: GATE
2: DRAIN
3: SOURCE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
2
Pulsed Drain Current
1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1
2
SYMBOL
V
DS
V
GS
LIMITS
250
±20
10
6.3
26
5.3
14
52
20
-55 to 150
UNITS
V
V
T
C
= 25 ° C
T
C
= 100 ° C
I
D
I
DM
I
AS
A
L = 1mH
T
C
= 25 ° C
T
C
= 100 ° C
E
AS
P
D
T
J
, T
stg
mJ
W
°C
SYMBOL
R
JA
R
JC
TYPICAL
MAXIMUM
62.5
2.4
UNITS
°C/W
Pulse width limited by maximum junction temperature.
This characteristics assumes the die are assembled in TO-220 packages.
ELECTRICAL CHARACTERISTICS (T
J
= 25
°
C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance
1
REV 1.0
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
V
DS
= 0V, V
GS
= ±20V
V
DS
= 250V, V
GS
= 0V
V
DS
= 200V, V
GS
= 0V, T
J
= 125 ° C
V
GS
= 4.5V, I
D
= 5A
R
DS(ON)
1
V
GS
=10V, I
D
= 5A
491
381
250
1
2
3
±100
1
10
590
460
mΩ
H-1-2
V
nA
A
LIMITS
MIN TYP MAX
UNIT
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1025HDB
TO-252
Halogen-Free & Lead-Free
7
S
Forward Transconductance
1
g
fs
V
DS
= 10V, I
D
= 5A
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
Fall Time
2
2
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 125V ,
I
D
10A, V
GS
= 10V, R
GEN
=6Ω
V
GS
= 10V , V
DS
= 200V
I
D
=10A
V
GS
= 0V, V
DS
= 25V, f = 1MHz
372
64
10.9
13
1.7
6.1
10
18
29
22
nS
nC
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25
°
C)
Continuous Current
Forward Voltage
1
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
1
2
I
S
V
SD
t
rr
Q
rr
I
F
= 10A, V
GS
= 0V
I
F
= 10A, dI/dt=100A/μs
134
511
10
1
A
V
nS
nC
Pulse test : Pulse Width
300
sec,
Duty Cycle
2%.
Independent of operating temperature.
REV 1.0
2
H-1-2
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1025HDB
TO-252
Halogen-Free & Lead-Free
12
Output Characteristics
I
D
, Drain-To-Source Current(A)
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
12
Transfer Characteristics
I
D
, Drain-To-Source Current(A)
9
9
6
VGS=4V
6
25℃
3
125℃
-20℃
0
0
1
2
3
4
5
6
7
3
VGS=3.5V
0
0
2
4
6
8
10
V
DS
, Drain-To-Source Voltage(V)
V
GS
, Gate-To-Source Voltage(V)
Gate charge Characteristics
10
VDS=200V
ID=10A
700
Capacitance Characteristic
V
GS
, Gate-To-Source Voltage(V)
600
C , Capacitance(pF)
8
500
6
400
CISS
300
4
200
2
100
COSS
0
0
3
0
0
5
10
15
20
25
CRSS
Qg , Total Gate Charge(nC)
6
9
12
15
V
DS
, Drain-To-Source Voltage(V)
30
On-Resistance VS Gate-To-Source
1.2
ID=5A
1
On-Resistance VS Drain Current
R
DS(ON)
ON-Resistance(OHM)
R
DS(ON)
ON-Resistance(OHM)
0.8
0.9
0.6
VGS=4.5V
VGS=10V
0.6
0.4
0.3
0.2
0
2
4
6
8
10
0
0
3
6
9
12
15
V
GS
, Gate-To-Source Voltage(V)
I
D
, Drain-To-Source Current(A)
REV 1.0
3
H-1-2
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1025HDB
TO-252
Halogen-Free & Lead-Free
3.0
On-Resistance VS Temperature
100
Source-Drain Diode Forward Voltage
Normalized Drain to Source
ON-Resistance
2.5
2.0
I
S
, Source Current(A)
10
1.5
1.0
1
0.5
VGS=10V
ID=5A
150℃
25℃
0.0
-50
-25
0
25
50
75
100
125
150
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature(˚C)
V
SD
, Source-To-Drain Voltage(V)
Safe Operating Area
100
Operation in This
Area is Limited
by RDS(ON)
Single Pulse Maximum Power Dissipation
500
Single Pulse
RθJC = 2.4˚C/W
TC=25˚C
I
D
, Drain Current(A)
400
Power(W)
10
300
1ms
1
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 2.4˚C/W
4.Single Pulse
0.1
1
10ms
200
100ms
DC
100
V
DS
, Drain-To-Source Voltage(V)
10
100
1000
0
0.001
0.01
0.1
1
10
100
Single Pulse Time(s)
Transient Thermal Response Curve
10
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.01
1
Transient Thermal Resistance
r(t) , Normalized Effective
Notes
0.1
single pulse
1.Duty cycle, D= t1 / t2
2.RthJC = 2.4
℃/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
0.01
0.0001
0.001
0.01
0.1
1
10
100
T
1
, Square Wave Pulse Duration[sec]
REV 1.0
4
H-1-2
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