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1N6638US

Description
0.3 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size71KB,2 Pages
ManufacturerCDI-DIODE
Websitehttp://www.cdi-diodes.com
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1N6638US Overview

0.3 A, SILICON, SIGNAL DIODE

1N6638US Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionHERMETIC SEALED, Glass, D-5D, 2 PIN
stateACTIVE
packaging shaperound
Package SizeLONG FORM
surface mountYes
Terminal formWRAP AROUND
terminal coatingtin lead
Terminal locationEND
Packaging MaterialsGlass
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.0045 us
Maximum average forward current0.3000 A
• 1N6638US,1N6642US, 1N6643US AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/578
• 1N6638U,1N6642U, 1N6643U AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/578
• SWITCHING DIODES
• NON-CAVITY GLASS PACKAGE
• METALLURGICALLY BONDED
1N6638U & US
1N6642U & US
1N6643U & US
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 4.6 mA/°C Above TEC = + 110°C
Surge Current: I
FSM
= 2.5A, half sine wave, Pw = 8.3ms
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
V BR
TYPES
@ IR
=100 µA
V RWM
V F1
IFM
=10 mA
(Pulsed)
V (pk)
1N6638U & US
1N6642U & US
1N6643U & US
150
100
75
V (pk)
125
75
50
V dc
0.8
1.0
1.0
V dc
1.1
1.2
1.2
(Pulsed)
mA
200
100
100
V F2
@ I F2
tfr
IF
=50 mA
ns
20
20
20
trr
IR = 10 mA
IF = 10 mA
IREC = 1 mA
ns
4.5
5.0
6.0
DIM
D
F
G
S
MILLIMETERS
MIN
MAX
1.78
2.16
0.48
0.71
4.19
4.95
0.08MIN.
INCHES
MIN MAX
0.070 0.085
0.019 0.028
0.165 0.195
0.003MIN.
FIGURE 1
DESIGN DATA
CASE:
D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/578
LEAD FINISH:
Tin / Lead
I R1
TYPES
VR
= 20 V
nA dc
I R2
@V R
= V RWM
µA dc
I R3
V R = 20 V
TA = 150°C
µA dc
I R4
V R = V RWM
TA = 150°C
µA dc
C T1
VR=
0V
pF
C T2
VR=
1.5V
pF
THERMAL RESISTANCE: (R
OJEC):
50 °C/W maximum at L = 0
THERMAL IMPEDANCE: (Z
OJX): 25
°C/W maximum
POLARITY:
Cathode end is banded.
1N6638U & US
1N6642U & US
1N6643U & US
35
25
50
0.5
0.5
0.5
50
50
75
100
100
160
2.5
5.0
5.0
2.0
2.8
2.8
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com

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